MT53B4DABNK-DC Allicdata Electronics
Allicdata Part #:

MT53B4DABNK-DC-ND

Manufacturer Part#:

MT53B4DABNK-DC

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: LPDDR4 24G 384MX64 FBGA QDP
More Detail: SDRAM - Mobile LPDDR4 Memory IC
DataSheet: MT53B4DABNK-DC datasheetMT53B4DABNK-DC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory MT53B4DABNK-DC

MT53B4DABNK-DC is a form of random access memory (RAM) created by MGNonline Corporation that is targeted at embedded and mobile applications. This form of RAM is particularly useful for embedded and mobile applications due to the low power consumption and the high speed data transfer rates that it is capable of providing. It is designed to be used in environments where high data throughput and low power usage is key.

Applications

MT53B4DABNK-DC is commonly used in mobile, embedded, and systems-on-chip applications. It is ideal for applications that require low power consumption, high speeds, and high storage densities. It is often used in conjunction with embedded processors, where it provides a low-power storage solution for applications that require quick access and frequent data read/write cycles. Applications such as industrial automation, digital audio, digital video, and telecommunications can all benefit from the low-power, high-speed and high storage density provided by this memory.

Working Principle

MT53B4DABNK-DC is a form of volatile memory, meaning it loses its content when the power is turned off. It is based around the Dynamic Random Access Memory (DRAM) technology and uses dynamic random-access memory cells to store data. The memory cell is composed of four transistors and a capacitor connected in series, and the charge stored on the capacitor is used to store a binary bit (1 or 0). Data can be written to or read from the cells by changing the charge on the capacitor, allowing for quick access and write cycles.

In order to enhance the performance of the memory, MT53B4DABNK-DC employs a number of techniques such as "dual data rate" architecture, which allows for simultaneous reading and writing of data as well as memory refresh techniques which keep the data from becoming corrupt or lost when power is removed from the system.

In conclusion, MT53B4DABNK-DC is a low power, high performance type of random access memory that is ideal for embedded and mobile applications. It is capable of providing high data throughput, high storage densities, and low-power consumption which make it well suited for applications that need fast access and frequent read/write cycles.

The specific data is subject to PDF, and the above content is for reference

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