MT53D512M64D4SB-046 XT:E

Series:	--
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	SDRAM - Mobile LPDDR4
Memory Size:	32Gb (512M x 64)
Clock Frequency:	2133MHz
Write Cycle Time - Word, Page:	--
Memory Interface:	--
Voltage - Supply:	1.1V
Operating Temperature:	-30°C ~ 105°C (TC)

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MT53D512M64D4SB-046 XT:E – Application Field and Working Principle

Introduction

The MT53D512M64D4SB-046 XT:E is a double-data-rate 4th generation DDR4 SDRAM device. It is also known as MT53D512M64D4SB-046 XT:E. It is one of the commonly used memory devices in modern electronic systems. This device is mostly used in computing and network applications, such as in laptops, PCs and servers.

Features of MT53D512M64D4SB-046 XT:E

MT53D512M64D4SB-046 XT:E is a dynamic random-access memory (DRAM) device that operates at a clock rate of up to 3.2GHz with a maximum of four data transfers per clock cycle. It has a 512-Mbit memory capacity and a maximum data transfer rate of 17.6GB/s. It offers a number of features aimed at enhancing system performance and stability. These include error-correcting code (ECC) for reliable data transfers, on-die termination (ODT) to reduce signal reflection, and temperature-compensated self-refresh for improved temperature and power management.

Applications of MT53D512M64D4SB-046 XT:E

The MT53D512M64D4SB-046 XT:E has a wide range of applications in various computing and network systems. It is frequently used in PC and laptop systems due to its high memory capacity and fast data transfer rates. It is also suitable for use in high-performance computing and gaming systems. In addition, the device is suitable for use in data-intensive tasks, such as artificial intelligence and deep learning operations. Moreover, the device is suitable for use in various network applications due to its high speed and reliability. It is often used in routers, switches, access points, and other networking equipment. It is particularly suitable for use in high-traffic networks, such as datacenters, which can benefit from its high speed and data transfer rates.

Working Principle of MT53D512M64D4SB-046 XT:E

The MT53D512M64D4SB-046 XT:E is composed of two main components: the memory controller and the memory module. The memory controller is responsible for the system-level control of the device, such as data transfer, addressing and whether the device is in active or idle states. The memory module is composed of logic circuits and memory chips, which store the data. The memory chips operate in a synchronous mode, i.e. they are triggered by a clock signal with each phase lasting one clock cycle. Each phase can transfer four data bits and is referred to as a ‘quad’. As the memory controller sends requests to the memory module, the memory module returns requested data. It also checks for any errors or corruption in the data and corrects them using ECC. When the data is sent back to the memory controller, it is compared to the original data. If an error is detected, the memory controller sends another request for the data to be re-read until there is no error.

Conclusion

In conclusion, the MT53D512M64D4SB-046 XT:E is a DDR4 device with a high memory capacity and fast data transfer rates. It is often used in PC, laptop and server applications as well as in various network systems. Its main components are the memory controller and memory module, which operate in synchronous mode. They have built-in features such as ECC and ODT, which provide excellent data integrity.

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