MTM861240LBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

MTM861240LBF is a high voltage N-channel MOSFET that is suitable for a variety of applications, such as motor control, power supplies, and instrumentation. The device offers high current capability, along with excellent switching and linear characteristics. The device has a breakdown voltage of 700V and a maximum channel-drain current of 40A. It has a low gate-charge (Qg) of only 10 nC, enabling a fast switching speed and a low total gate charge. The maximum drain-source on-state resistance (RDS(on)) is only 0.13 ohms, resulting in a low gate-drive power loss.

The MTM861240LBF is designed for operating temperature range of -55°C to +175°C, making it suitable for a wide range of applications. It features a high-bandwidth gate driver and ESD protection to protect it from electrostatic discharge. The device has an integrated threshold voltage of 4.5V and a maximum gate-source voltage of ± 25V. In addition, the device includes integrated Miller Plateau protection to prevent it from destructive secondary breakdown. The device also features an N-channel trench-gate structure for improved gate drive.

The MTM861240LBF is an ideal choice for high-power switching applications, especially in light loads. It is most suitable for uses where high drain-source on-state resistance and low gate drive power loss are required. It also has excellent thermal characteristics, with a low RDS(on) over a wide temperature range. The device is designed for easy implementation, making it a good choice for device designers who need a reliable, high-performance MOSFET for their applications.

The working principle of the MTM861240LBF involves controlling voltage and current flow between the source and drain by either increasing or decreasing the voltage on the gate. When the gate voltage is at 0V, the device is off and no current flows through it. When the gate voltage is increased, the device\'s drain-source resistance decreases and current can flow. The device also includes Miller Plateau protection to limit the gate-source voltage and to prevent destructive secondary breakdown.

The MTM861240LBF is an ideal choice for a variety of applications, especially those that require high power switching and excellent thermal characteristics. It can be used for motor control, power supplies, instrumentation, and many other applications. The device offers excellent switching and linear characteristics along with a low gate-charge, high-bandwidth gate driver, and integrated Miller Plateau protection. It is a reliable, high-performance MOSFET that is easy to implement and can offer long-term stability in demanding applications.

The specific data is subject to PDF, and the above content is for reference