| Allicdata Part #: | MTM867270LBFTR-ND |
| Manufacturer Part#: |
MTM867270LBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Panasonic Electronic Components |
| Short Description: | MOSFET N-CH 20V 2.2A WSSMINI6 |
| More Detail: | N-Channel 20V 2.2A (Ta) 540mW (Ta) Surface Mount W... |
| DataSheet: |  MTM867270LBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 1.3V @ 1mA |
| Package / Case: | 6-SMD, Flat Leads |
| Supplier Device Package: | WSSMini6-F1 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 540mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 280pF @ 10V |
| Vgs (Max): | ±10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 105 mOhm @ 1A, 4V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4V |
| Current - Continuous Drain (Id) @ 25°C: | 2.2A (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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MTM867270LBF is a single N-channel Power MOSFET， manufactured by ON semiconductor. This MOSFET is developed to provide high performance and reliability along with low gate charge and fast switching speed. It comes in a TO-220 package and is comprehensively used in various applications.
Features
- Excellent Mutual Conductance
- Low input capacitance
- Fast switching speed
- Low power dissipation
- Lo gate charge
- Optimized for low temperature performance
Applications
- Relay/ Motor/ Lamp control
- DC-DC converters
- Switch mode power supplies
- DC motor speed control
- Power tools
- Heatre exchangers
- Coffee machines
- Packaging machines
Working Principle
MTM867270LBF is an N-Channel Power MOSFET. It utilizes a vertical DMOS structure and employs a low resistance N-channel silicon gate oxide. It is designed to provide low on-state resistance and fast switching, making it suitable for all kinds of applications.
The MTM867270LBF works by having the source and drain electrodes connected to the Gate channel. When a voltage is applied to the gate electrode, it creates an electrostatic field
The specific data is subject to PDF, and the above content is for reference
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