Allicdata Part #: | MTM862270LBFTR-ND |
Manufacturer Part#: |
MTM862270LBF |
Price: | $ 0.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | MOSFET N-CH 20V 2.2A WSSMINI6 |
More Detail: | N-Channel 20V 2.2A (Ta) 540mW (Ta) Surface Mount W... |
DataSheet: | MTM862270LBF Datasheet/PDF |
Quantity: | 10000 |
10000 +: | $ 0.08832 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 2.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4V |
Rds On (Max) @ Id, Vgs: | 105 mOhm @ 1A, 4V |
Vgs(th) (Max) @ Id: | 1.3V @ 1mA |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 280pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 540mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | WSSMini6-F1 |
Package / Case: | 6-SMD, Flat Leads |
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The MTM862270LBF is a high-voltage, high-speed p-channel MOSFET device. The MTM862270LBF is an advanced semiconductor FET with features such as superior switching speed, low gate charge, and low on-resistance. The device is especially useful for applications where a fast switching speed and a low Ron are desired. Moreover, it is suitable for applications where high voltage operation is needed.
The MTM862270LBF utilizes a normally-off p-channel enhancement mode MOSFET. It is designed to handle high reverse voltages and high-frequency switching. The device is fabricated using a high-density, high-speed performance process that achieves outstanding speed, low-loss characteristics and superior RDS(on). The device also has a low gate charge to minimize switching losses and enable high frequency operation.
The MTM862270LBF offers significant benefits in applications such as:
- Power amplifier
- DC-DC converters
- High frequency switching
- Servo motor control
- Telecommunication switch management
- General purpose power switching
The working principle of a MOSFET is based on the transistor principle. When a voltage is applied to its gate terminal, a flow of electrons (electron current) is induced in the drain-to-source region. This current flow causes a voltage drop across the device, called the on-resistance (RDS (on)). The magnitude of the RDS (on) is proportional to the voltage applied to the gate terminal. Higher the gate voltage, higher is the RDS (on). The amount of current that can be passed through the device is limited by its RDS (on). The device has a low-threshold voltage, making it suitable for low voltage applications.
The MTM862270LBF is a fast-switching device that can be used in applications where a quick response time is desired. It has low gate charge which reduces switching losses and ensures high frequency operation. Moreover, its high voltage rating makes it ideal for a wide range of applications. Its flexible gate terminal makes it suitable for use in various circuit configurations.
The MTM862270LBF is a high-speed and high-voltage device that is suitable for use in a variety of applications. Its low gate charge and low on-resistance make it a suitable choice for high-frequency, high-voltage applications. Its flexible gate terminal makes it suitable for use in various circuit configurations. Moreover, its high voltage rating makes it ideal for a wide range of applications. This makes the MTM862270LBF ideal for many different applications across a variety of industries.
The specific data is subject to PDF, and the above content is for reference
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