MTM861280LBF Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4V
Rds On (Max) @ Id, Vgs:	420 mOhm @ 500mA, 4V
Vgs(th) (Max) @ Id:	1.5V @ 1mA
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	80pF @ 10V
FET Feature:	--
Power Dissipation (Max):	540mW (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	WSSMini6-F1
Package / Case:	6-SMD, Flat Leads

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The MTM861280LBF is a single-gate MOSFET that is used to control a variety of circuits, from simple power delivery to the level of high-voltage output. It is an ultra-low voltage MOSFET made with submicron CMOS technology. It has a thin-film process and is capable of carrying more than 1A peak current. Its total gate charge is 6.9mV and its on-resistance is 7mΩ. The device has been designed for use in a wide range of applications, including digital power, instrumentation, and high voltage power delivery.The MTM861280LBF is composed of two distinct parts, a p-channel and a n-channel MOSFET. The p-channel MOSFET serves as the input, while the n-channel MOSFET is the output. This combination of components allows the device to be used as either a switch or an amplifier. In general, the p-channel MOSFET is used as the input to control the output of the n-channel MOSFET. The voltage on the gate is used to control the on/off state of the device, as well as the current flow.The MTM861280LBF is designed for use in high-reliability, high-voltage applications, such as audio power supplies, regulated power supplies, and aerospace applications. The ultra-low on-resistance of the device allows it to be used in situations where the current needs to be efficiently switched and controlled. Additionally, the low input gate charge and low gate-drive requirements make it suitable for circuit designs that require low power consumption.The MTM861280LBF is a PROFET, meaning it is both a single-gate MOSFET and a protection device at the same time. This feature makes it ideal for applications where over-voltage, over-temperature, and under-voltage protection are needed. The device also offers high-speed switching with low total gate charge, ensuring excellent operation within high-frequency circuits. The MTM861280LBF MOSFET has been designed to work in various applications, from audio power supplies to relatively high voltage output. The device\'s high current capability, low input charge, and low on-resistance make it highly suitable for use in power delivery applications. The device provides protection from over-voltage and temperature events, making it suitable for applications that require reliable protection. Finally, it also offers excellent switching properties at high frequencies, making it suitable for use in circuits that require high-speed operation.

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