MX29F200CBMI-70G Allicdata Electronics
Allicdata Part #:

1092-1080-ND

Manufacturer Part#:

MX29F200CBMI-70G

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Macronix
Short Description: IC FLASH 2M PARALLEL 44SOP
More Detail: FLASH - NOR Memory IC 2Mb (256K x 8) Parallel 70n...
DataSheet: MX29F200CBMI-70G datasheetMX29F200CBMI-70G Datasheet/PDF
Quantity: 2684
Stock 2684Can Ship Immediately
Specifications
Series: MX29F
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Mb (256K x 8)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-SOIC (0.496", 12.60mm Width)
Supplier Device Package: 44-SOP
Description

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Memory – MX29F200CBMI-70G Application Field and Working Principle

MX29F200CBMI-70G is a Flash memory device produced by Macronix International Co., Ltd. that has a capacity of 256K bytes — 32K words. It is a 3.3V or 5V non-volatile device based upon floating gate technology with space-saving and low power consumption design. This device is renowned for its industry-leading memory functions, especially in the industry of data storage.

Fields of applications:

MX29F200CBMI-70G is a very flexible Flash memory device, it can be used for various applications in almost any field and sector. The device is often used for PC memory upgrades and upgradeable applications, including but not limited to, game consoles, industrial controllers, computer peripherals, and automotive.

The device is also a popular choice for embedded systems where stringent requirements need to be met, especially for systems with tight space constraints and power consumption, such as handheld and mobile devices and IoT applications.

In addition, given its affordability and the fact that it typically comes in a wide variety of packaging, MX29F200CBMI-70G is also a strong candidate for applicability in high-volume production products, such as digital still cameras, personal digital assistants, digital set-top boxes, digital cameras and cell phones.

Working principle:

MX29F200CBMI-70G works by using the charge stored in a floating gate. This floating gate is then used to modify the electrical properties of the underlying semiconductor, allowing the Flash memory device to retain information even when the device is not actively powered.

Furthermore, this device also employs an array of transistors from the source to the drain and from the gate to the channel, allowing the device to sense an applied channel voltage in order to distinguish between a high and low logic states. This charge is then translated into a corresponding data bit which is then stored in the device.

The process of data writing, erasing and modification is then achieved by applying suitable voltages to erase and write into the memory cells. Two main processes in this regard are the write and the erase processes, both of which utilise application specific voltages.

The write process works by setting the logic value of the cell to either a high or a low logic state while the erase process works by completely resetting the cell logic value to the default state. Generally, the writing and erasing processes utilise different voltages for each combination of logic states (high/low) and for the resetting of the logic value to the default state.

In summary, the MX29F200CBMI-70G is a very versatile and powerful Flash memory device, widely used in almost all fields due to its quick performance, low power consumption and affordability. It utilises a combination of charge based floating gate technology and a transistor array design to store and read data, offering an industry-leading memory solution in a very space-saving form.

The specific data is subject to PDF, and the above content is for reference

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