MX29LV800CBTI-90G Allicdata Electronics
Allicdata Part #:

MX29LV800CBTI-90G-ND

Manufacturer Part#:

MX29LV800CBTI-90G

Price: $ 0.58
Product Category:

Integrated Circuits (ICs)

Manufacturer: Macronix
Short Description: IC FLASH 8M PARALLEL 48TSOP
More Detail: FLASH - NOR Memory IC 8Mb (1M x 8) Parallel 90ns ...
DataSheet: MX29LV800CBTI-90G datasheetMX29LV800CBTI-90G Datasheet/PDF
Quantity: 1000
1920 +: $ 0.53142
Stock 1000Can Ship Immediately
$ 0.58
Specifications
Series: MX29LV
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8)
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP
Description

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The MX29LV800CBTI-90G is a memory device used to store data in computers and other digital devices. It is a member of the family of NOR flash memory devices, which are known for their ability to retain information even when the power is off. In addition to its function as a storage medium, this particular device also has the capability to act as a controller for other memory devices.

In terms of the application field, MX29LV800CBTI-90G is used mainly in industrial and medical equipment, such as computers, scientific instruments, telecommunications networks, and automotive systems. For these applications, the memory device’s long-term data retention ensures that data will be safe from data loss due to power outages.

As for its working principle, MX29LV800CBTI-90G operates like a typical NOR flash memory device. It contains two transistors in series with each other. The first gain or reset transistor is responsible for the reset or initializing of the memory cell, and the second gain or read/write transistor is responsible for carrying out all operations that are required for reading from and writing to the memory cell.

In order to read from and write to the memory cell, the second gain transistor is biased to one of two voltages - 0.8V or 1.5V. When this voltage is at 0.8V, the device is in a read state; when it is at 1.5V, it is in a write state. To access or read a particular location in the memory, the chip must be in the read state. To write information to a specific memory location, the chip must be brought into the write state.

When it comes to the operation of MX29LV800CBTI-90G, it can be thought of as a self-contained unit that makes use of simple logic circuitry to execute various types of memory operations. The device is programmed with the specific memory operations that it needs to perform, and when it encounters a particular sequence of inputs, it will proceed to execute the appropriate operation. Additionally, MX29LV800CBTI-90G includes a built-in error correction system that helps to ensure that data remains intact and secure.

The MX29LV800CBTI-90G is a reliable option for data storage and retrieval applications. Its proven ability to store information in a secure manner, even when the power is off, makes it a good choice for industrial and medical applications. Furthermore, its simple logic design and error correction system helps to ensure that data stored and retrieved will remain secure.

The specific data is subject to PDF, and the above content is for reference

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