MX29GL256FUXFI-11G

Series:	MX29GL
Packaging:	Tray
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	256Mb (32M x 8)
Write Cycle Time - Word, Page:	110ns
Access Time:	110ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	64-LBGA, CSPBGA
Supplier Device Package:	64-LFBGA, CSP (11x13)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory: MX29GL256FUXFI-11G Application Field and Working Principle

The MX29GL256FUXFI-11G is the latest Flash memory device from Macronix, a well-known manufacturer of semiconductor devices. This device is a highly sophisticated, non-volatile memory component that functions as an integrated circuit (IC) and includes a built-in controller and an internal two-chip architecture. It can store up to 32Mbit of data and has an erase capability of up to 8 Terrabytes.This memory component has a wide range of applications in the embedded world, including general purpose data storage, firmware storage, code address-by-name storage, system file storage and other specific applications. In the industrial sector, the device is well suited for use in industrial automation, program selection, process control systems, instrumentation, and so on.The device has a few distinct features that make it ideal for such applications. It operates from a low voltage of 2.7V, making it suitable for battery-operated applications. It also has a fast read and write performance of about 100Mb/s, capability for partial sector erase, and a low power standby mode. The device also supports x1, x2 and x4 programming, allowing for fast and flexible programming of the Flash memory.The device operates at a frequency of up to 50MHz and is fully compatible with a variety of Flash memory standards, including Single-Level, Multi-Level and Host Controller Interface (HCI). Additionally, the MX29GL256FUXFI-11G supports several different types of memory read and write commands, including Read, Write, Program and Erase, which enables flash memories to be programmed and managed efficiently.The working principle of this device is based on the principle of a “sense and source” architecture. Upon power up, the device initializes its memory cells in a process referred to as “sense” step. During this step, the device applies an appropriate bias voltage between the source and the drain electrodes of the cell, and reads the detected voltage values (state) of the cells, which are then stored in memory.During the “source” step, the previously stored values are then used to adjust the source and drain electrode bias voltages of the cell to the appropriate levels. After this, the “source” voltage is then used to program the cells and write the desired data into the memory. The written data are then read by the controller and compared with the read values in the “sense” operation, to ensure that the data was written to and read from the cells correctly.In conclusion, the MX29GL256FUXFI-11G is a highly advanced memory component with a broad range of applications in the embedded world. Its low voltage operation and fast read and write performance make it ideal for a variety of industrial and commercial applications. It implements the “sense and source” principle, which ensures that the data written to and read from the cells are reliable and accurate.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description