MX29LV160DTXEI-70G

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Memory technologies are ubiquitous in modern computer systems. As the sophistication of computer systems increases, the need for larger and faster memory becomes more critical. MX29LV160DTXEI-70G is one of the fastest and most powerful memory devices available. This article will discuss the application field and working principle of the MX29LV160DTXEI-70G.

The MX29LV160DTXEI-70G is an Enterprise class, ultra low power and ultra high speed Flash memory device. This device features a 16Mbit memory array with an access time of 70ns. The device is an ideal choice for applications requiring large capacity, high-speed, and low power operation, such as set-top boxes and digital audio players. The MX29LV160DTXEI-70G is fully compatible with the industry standard JEDEC requirements and provides several industry-leading features such as dual-page programming, 64-bit ECC, and Chip-erase capability.

The MX29LV160DTXEI-70G is organized as 2MWords (4MBytes) of 32 bits each and features an array of 16Mbit memory cells. This device comes with a TSOP-48 package and offers a maximum read/write cycle of 1,000/200ms. The chip includes on-chip error detection and correction (EDC), which offers protection against soft errors. The device also offers both first-level write protect and second-level erase security. The MX29LV160DTXEI-70G is a high speed, low power device with access times as low as 70ns.

The working principle of MX29LV160DTXEI-70G is based on the principle of “floating gate” non-volatile memory. A floating gate is a small tunnel of insulation situated between the programmed groups and electrons. In a regular NAND Flash device, the electrons are allowed to move freely from gate to gate when proper “gate voltage” is applied. However, in the MX29LV160DTXEI-70G the electrons are trapped on the floating gate. The electrons are then used as the data bit and can only be reverted when the memory is erased, thus causing write cycles of the chip. This enables the MX29LV160DTXEI-70G to offer high speed read and write access times as low as 70ns.

The MX29LV160DTXEI-70G is an ideal memory device for applications requiring high speed, low power, and high capacity. This device is well suited for automotive, industrial, and consumer products with its high speed, low power, and high endurance qualities. Because the MX29LV160DTXEI-70G is a high speed and low power device, it is also suitable for networking and communications applications. The device is also offered in industry standard packages, making it easy to integrate into existing systems. The MX29LV160DTXEI-70G also comes with on-board ECC protection, chip-erase capability, and flash security.

In conclusion, the MX29LV160DTXEI-70G is an Enterprise class, ultra low power and ultra high speed Flash memory device. This device features a 16Mbit memory array with an access time of 70ns. The working principle of MX29LV160DTXEI-70G is based on the principle of “floating gate” non-volatile memory. The MX29LV160DTXEI-70G is an ideal memory device for applications requiring high speed, low power, and high capacity, and is well suited for automotive, industrial, and consumer products. The device is also offered in industry standard packages, making it easy to integrate into existing systems.

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