MX29SL800CBXEC-90G

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MX29SL800CBXEC-90G is a nonvolatile 80ns SLC NAND Flash Memory with a 2 Gb die organized as 256 mega-bytes (256M x 8 bits). It offers fast boot-up times, low power-consumption, small package size, and is ideal for a wide range of applications, including industrial, automotive, and consumer electronics. The MX29SL800CBXEC-90G consists of a SLC core, including the control logic, column decoder, and memory array, consisting of 1024 pages of 8192 bytes. It has a fully integrated controller supporting the latest NAND commands for high performance and flexibility.

The application field of MX29SL800CBXEC-90G covers multiple fields, such as industrial, automotive and consumer electronics. In the industrial field, it is widely used for high-speed, low-cost memory modules, communication modules and signal processing modules. In the automotive field, it is mainly used in the production of connected car systems, navigation systems, vehicle audio systems and other products to provide reliable and durable non-volatile memory. In the consumer electronics field, it can be used to realize the functions of low-power, small-size, wear-resistant and reliable SSD, portable storage devices and other storage systems.

The working principle of MX29SL800CBXEC-90G is based on the floating gate transistor structure of mask ROM, which uses charge injection and charge storage of floating gate, thus forming nonvolatile storage. In the internal system of MX29SL800CBXEC-90G, all operations are controlled by the instruction processing logic. According to the needs, the logic will take different operations on the substrate surface, such as erasing, writing, reading, locking and unlocking, to complete all operations.

When erasing, the charge stored on the control gate oxide layer of the floating gate transistor is used for injection operations. The injection electric field will drive the electrons from the control gate oxide layer to the floating gate, so as to reduce the threshold voltage of the specific memory cell and realize the data erasure. When writing, injection writing is adopted, that is, the electrons are injected from the control gate oxide layer into the floating gate. This injection process realizes the logic level shift between 0 and 1 and the permanent data storage. When reading, the threshold voltage of the memory cell is measured by the amplifier circuit, which controls the level of weak signals generated by the momentary voltage change of the cell.

In addition, MX29SL800CBXEC-90G should also support special instructions such as firmware mapping, fast read instructions, and number of page instructions. When using the firmware mapping instructions, it can reduce the number of commands to be issued for external operations and improve the write-in speed and control capability. The fast read instruction reduces the waiting time for data read and shortens the read time. The number of page instructions is used to control the number of pages to be read.

In conclusion, MX29SL800CBXEC-90G is a nonvolatile 80ns SLC NAND Flash Memory with a 2 Gb die organized as 256 mega-bytes (256M x 8 bits). It is widely used in the fields of industrial, automotive and consumer electronics. The working principle of this memory is based on the floating gate transistor structure of mask ROM, which uses charge injection and charge storage of floating gate, thus forming nonvolatile storage.

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