N25Q064A13E12A0F TR

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N25Q064A13E12A0F TR Application Field and Working Principle

The N25Q064A13E12A0F TR is a non-volatile memory device belonging to the memory category. It is 64Mb, 8-bit, serial NOR Flash and provides an access time of up to 85ns. It is offered in a small 8-pin SOIC package, making it optimal for space-constrained designs. The N25Q064A13E12A0F TR features a single voltage programming option that supports 1.8V, 2V, and 3V I/O operations in either read or write modes. The N25Q064A13E12A0F TR also supports a different 4-bit read/write burst architecture to enable fast random access for time-critical applications.

Applications

The N25Q064A13E12A0F TR is used in a wide variety of applications such as automotive, telecommunications, computing, consumer electronics, and industrial products. These applications include non-volatile memory storage of code, operating systems, programmable logic controllers (PLCs), microprocessors, and peripheral equipment.

The N25Q064A13E12A0F TR is also used in automotive applications such as engine control, air bag systems, and instrument cluster control. It is also applicable in a variety of communication systems, including cellular handsets and base stations, set top boxes, fiber optic transmitters and receivers, and digital subscriber line (DSL) modems. In addition, it is also used in medical systems such as patient monitoring systems and medical imaging equipment.

Working Principle

The N25Q064A13E12A0F TR utilizes the full potential of serial NOR flash technology. The N25Q064A13E12A0F TR is a non-volatile NAND Flash memory device. It is a single piece of non-volatile memory (NVM) integrated circuit package, consisting of NAND Flash cells arrayed on a single chip substrate. It operates as part of a memory system, along with other NVM devices, as part of a synchronous interface for data and address recognition. When a command is sent to the interface, the N25Q064A13E12A0F TR performs the programmed operation in the NAND Flash memory array. As the N25Q064A13E12A0F TR is non-volatile, the data stored in it will remain until the device is powered-off.

The N25Q064A13E12A0F TR utilizes built-in error correction code (ECC) to detect and correct any random errors that may occur during normal read and write operations. ECC helps to maintain and protect the data integrity at all times. The N25Q064A13E12A0F TR also has power loss protection, allowing the device to save any data that is in the process of being written at the time of power failure, greatly increasing its reliability.

Conclusion

The N25Q064A13E12A0F TR is an ideal memory device for meeting a variety of application needs. Its small size, fast speeds, and error-correction capabilities make it an attractive choice for a wide variety of applications ranging from automotive to communications to consumer electronics. It provides a reliable and cost-effective solution for these applications.

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