Allicdata Part #: | N25Q064A11ESE40E-ND |
Manufacturer Part#: |
N25Q064A11ESE40E |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 64M SPI 108MHZ 8SO |
More Detail: | FLASH - NOR Memory IC 64Mb (16M x 4) SPI 108MHz 8... |
DataSheet: | N25Q064A11ESE40E Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 64Mb (16M x 4) |
Clock Frequency: | 108MHz |
Write Cycle Time - Word, Page: | 8ms, 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 1.7 V ~ 2 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.209", 5.30mm Width) |
Supplier Device Package: | 8-SO W |
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N25Q064A11ESE40E is a Non-Volatile Memory (NVM), which is widely used in different applications. It features a 64Mb density and various features such as a low power consumption, a fast read/write speed, and high endurance. This article will discuss the various application fields and working principle of the N25Q064A11ESE40E.
Types of NVM
Non-Volatile Memory (NVM) is a type of memory technology that allows the storage of digital data without the need for power or any other input or output. NVM is usually used in a variety of applications, including the storage of persistent data, temporary storage of data while a system is loading, and long-term storage of data that is to be accessed very infrequently. NVM is divided into two major groups: electrically erasable programmable read-only memory (EEPROM) and flash memory. The N25Q064A11ESE40E belongs to the flash memory category.
Working Principle of N25Q064A11ESE40E
The N25Q064A11ESE40E utilizes flash memory technology, which is based on the usage of Electrical Interface Blocks and the Process of Floating Gate Transistor (FGT). The Electrical Interface Blocks acknowledge read, write, and erase commands as per the JEDEC standards. The Process of FGT is based on trapping charge on the floating gate of transistors, which are strung in strings and on each chip. This trapped charge remains on the gate even when the power is off, since no transmission is required to store the bit. The trapped charge is then electrically activated to read or modify the stored bit.
Application Fields of N25Q064A11ESE40E
The N25Q064A11ESE40E offers a wide range of application fields, including:
- Automotive Electronics. In vehicles, the N25Q064A11ESE40E can provide control and data storage functions, allowing drive-level control. It also has the ability to store and execute user applications, increasing the fun factor of the driving experience.
- Networking. Network equipment such as routers, switches, and wireless access points can benefit from the low power consumption, fast read/write speed, and high endurance offered by the N25Q064A11ESE40E.
- Consumer Electronics. The N25Q064A11ESE40E is ideal for consumer electronics due to its low power consumption, fast read/write speed, and high endurance. It can be used in a variety of devices such as cameras, MP3 players, and digital televisions.
- Industrial Equipment. The N25Q064A11ESE40E is suitable for use in industrial application. Devices such as hobs, industrial control systems, and safety systems can benefit from its fast read/write speed, high endurance, and robustness.
The N25Q064A11ESE40E is a versatile memory device that can be used in a wide range of applications. It features a low power consumption, fast read/write speed, high endurance, and is robust enough to withstand even tough industrial environments.
The specific data is subject to PDF, and the above content is for reference
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