N25Q064A13E12D0E Allicdata Electronics
Allicdata Part #:

N25Q064A13E12D0E-ND

Manufacturer Part#:

N25Q064A13E12D0E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 64M SPI 108MHZ 24TPBGA
More Detail: FLASH - NOR Memory IC 64Mb (16M x 4) SPI 108MHz 2...
DataSheet: N25Q064A13E12D0E datasheetN25Q064A13E12D0E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (16M x 4)
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)
Description

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The N25Q064A13E12D0E is a non-volatile memory device from the family of NOR Flash memory. It is a multi-purpose memory solution with high programming and erase performance, high speed read, embedded SRAM and high endurance Flash memory. The device is designed for industrial, communications, and consumer applications.

The N25Q064A13E12D0E is a 64Mb (8 MB) NOR Flash memory IC, manufactured by Micron Technology. The device is offered in a space-saving 8-pin SOIC (Small Outline Integrated Circuit) package. It is particularly suitable for harsh environment applications and mobile applications that require high temperature operation.

The N25Q064A13E12D0E is an ideal memory solution for embedded real-time system applications that need an efficient, reliable and low power memory solution. It features an exceptionally low power consumption of 0.36 watts, and a 20 MHz programming clock for fast programming and erase times. The device is also designed for low power consumption with a hold current of 0.1 µA, and a standby current of 0.1 mA.

The device has two main operation modes, read and write. In read mode, the device processes data according to its internal control logic to read data from memory pages. When writing data, the write operation can be enabled with a single rising edge command, after which data is written to the memory array according to the program command. The device allows for multiple memory array configurations with various word lengths, starting address, and page size. The memory array is divided into multiple 8-bit words resulting in a total of 512 data words.

The N25Q064A13E12D0E offers an embedded SRAM buffer of 64 bytes, allowing data to be written/read faster by reducing read operation cycles. The write operation can be enabled with a single rising edge command and the write command is completed with a single clock cycle. The device also features an Endurance rating of 10,000 erase/write cycles per page.

The N25Q064A13E12D0E is available in an 8-pin SOIC package, and is ideal for applications that require low power and a high level of reliability. Its low power consumption and fast write/erase times make it an excellent choice for industrial, communications, and consumer applications. It can be used for non-volatile storage in a variety of embedded systems, and for fast data transfer.

The specific data is subject to PDF, and the above content is for reference

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