N25Q064A11EF640F TR Integrated Circuits (ICs) |
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Allicdata Part #: | N25Q064A11EF640FTR-ND |
Manufacturer Part#: |
N25Q064A11EF640F TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 64M SPI 108MHZ 8VDFPN |
More Detail: | FLASH - NOR Memory IC 64Mb (16M x 4) SPI 108MHz 8... |
DataSheet: | N25Q064A11EF640F TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 64Mb (16M x 4) |
Clock Frequency: | 108MHz |
Write Cycle Time - Word, Page: | 8ms, 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 1.7 V ~ 2 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-VDFN Exposed Pad |
Supplier Device Package: | 8-VDFPN (6x5) (MLP8) |
Base Part Number: | N25Q064A11 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The N25Q064A11EF640F TR is one of the most popular and powerful memory solutions on the market. It is a type of nonvolatile flash memory that allows for fast, reliable data storage and retrieval. The N25Q064A11EF640F TR combines the performance and low power of flash memory with the option of a dual-die solution for ultracompact form factor.
The N25Q064A11EF640F TR is widely used in many applications, from consumer electronics to industrial safety equipment. It provides excellent performance, reliability and power savings while maintaining a small footprint. The N25Q064A11EF640F TR can be used in a wide range of products, including mobile phones, digital cameras, printers, PDAs and portable gaming devices.
The working principle behind this memory solution is simple. It uses a nonvolatile flash memory array called a nonvolatile Storage Cell (NSC) or NAND cell for short. The N25Q064A11EF640F TR flash memory provides an array of tightly interconnected transistors, which enable it to store 8-bits of data in each cell. This data is then organized into a logical array, and can be retrieved quickly when requested.
The primary benefit of this memory solution is its ability to save users\' data that would otherwise be lost when power is lost, or when a device is shut down. The N25Q064A11EF640F TR is designed to be highly reliable, with a Mean Time Between Failures (MTBF) rating of 10 years. It has also been designed to be resistant to shocks, vibrations and temperature fluctuations, making it a great choice for applications such as industrial safety equipment. The N25Q064A11EF640F TR is also extremely low power, making it ideal for mobile devices such as cell phones.
In terms of performance, the N25Q064A11EF640F TR provides very fast data access, with an access time of 10 nanoseconds. It provides very high endurance, with a write cycle rating of up to 1 million erase/write cycles with a single block erase. The N25Q064A11EF640F TR also features a high-density NAND cell architecture, making it one of the most cost-effective solutions for large memory applications.
In summary, the N25Q064A11EF640F TR is a highly reliable and cost-effective memory solution. It provides fast data access, low power consumption, high endurance and a small form factor, making it ideal for applications ranging from consumer electronics to industrial safety equipment. It is a great choice for those looking to store large amounts of data in a reliable manner.
The specific data is subject to PDF, and the above content is for reference
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