Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	128Mb (32M x 4)
Clock Frequency:	108MHz
Write Cycle Time - Word, Page:	8ms, 5ms
Memory Interface:	SPI
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-VDFN Exposed Pad
Supplier Device Package:	8-VDFPN (MLP8) (8x6)
Base Part Number:	N25Q128A13

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Introduction

N25Q128A13TF840E is a Non-volatile memory integrated circuit (IC) from Micron Semiconductor. It is designed for applications that require high-speed non-volatile storage. N25Q128A13TF840E offers a wide range of storage capacity and speed, making it an ideal choice for a variety of applications. The technology behind N25Q128A13TF840E offers low power consumption, low voltage operation, and high-speed performance.

Classification

N25Q128A13TF840E is classified as a type of memory, specifically an integrated circuit-based or non-volatile memory. It is used to store data and instructions that are not erased if the system is reset or powered off. Non-volatile memory also generally provides faster access time than other forms of memory like RAM.

Application Field

N25Q128A13TF840E is ideal for a range of applications because it provides low power consumption, low voltage operation, and high-speed performance. It is commonly used in industrial and consumer embedded systems, as well as in other applications that require high-speed non-volatile storage.In embedded systems, N25Q128A13TF840E can be used to store program instructions and data needed while the system is running. In consumer electronics, N25Q128A13TF840E can be used to store personal media such as music, videos, and photos. In server applications, N25Q128A13TF840E can be used for storing large volumes of data for quick access.

Working Principle

N25Q128A13TF840E is based on a 3D NAND architecture. It is comprised of a series of interconnected Flash memory cells that are stacked horizontally on top of each other. Each cell has two conductors which are used to control the flow of electrons between the source and drain. The voltage applied to the control gate will determine the state of the cell.N25Q128A13TF840E stores data by applying a voltage pulse to the corresponding cells. This pulse will cause electrons to be stored either in the “on” state or in the “off” state. When the system is powered down, the electrons will be stored in the same state and can be accessed later. N25Q128A13TF840E also supports error correction technology which can detect and correct errors that occur during data storage. This makes the technology more reliable, improving the accuracy and speed of data access.

Conclusion

In conclusion, N25Q128A13TF840E is classified as a type of memory, specifically an integrated circuit-based or non-volatile memory. It is designed for applications that require high-speed non-volatile storage and offers low power consumption, low voltage operation, and high-speed performance. It is an ideal choice for a variety of embedded and consumer applications that require reliable non-volatile storage and supports error correction technology for more accurate and quicker data access.

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