Allicdata Part #: | N25Q064A13ESF40E-ND |
Manufacturer Part#: |
N25Q064A13ESF40E |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 64M SPI 108MHZ 16SO W |
More Detail: | FLASH - NOR Memory IC 64Mb (16M x 4) SPI 108MHz 1... |
DataSheet: | N25Q064A13ESF40E Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 64Mb (16M x 4) |
Clock Frequency: | 108MHz |
Write Cycle Time - Word, Page: | 8ms, 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 16-SOIC (0.295", 7.50mm Width) |
Supplier Device Package: | 16-SO W |
Base Part Number: | N25Q064A13 |
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N25Q064A13ESF40E is one of the most common types of memories used in applications today. The memory, which is also known as a Flash NOR memory, is used in a wide range of applications, such as embedded systems, consumer electronics, automotive, and a variety of other industrial applications. In this article, we will take a look at the application fields and working principles of N25Q064A13ESF40E.
Applications
N25Q064A13ESF40E is most commonly used in embedded systems. The memory is capable of providing a reliable data storage and retrieval system with minimal power consumption. This makes it ideal for applications that require low power consumption but still need rapid response times. N25Q064A13ESF40E can also be used for consumer electronics, such as digital cameras and digital music players. In addition, N25Q064A13ESF40E can be used in automotive and industrial applications to store important data and ensure a reliable data storage and retrieval system.
Working Principle
N25Q064A13ESF40E is based on the four basic principles of memory: write, erase, read and store. The memory uses a single-level (or MLC) cell structure which consists of two separated charge collectors, one for electrons and one for holes. When the memory is in write mode, electrical current is sent to the cell and the charges of electrons and holes are changed respectively. This change is stored until the next write operation is executed. When the memory is in read mode, a small amount of current is sent to the cell which causes the electrons and holes to be released. The current generated by the electrons and holes is measured to determine the data stored in the cell.
In erase mode, the current is increased much higher than in write mode, causing both electrons and holes to be completely discharged. This completely erases the data stored in the cell. Finally, the memory can be stored in standby mode. In this mode, the memory will not consume any power, allowing for minimal power consumption.
Conclusion
N25Q064A13ESF40E is a useful memory which can be used in a variety of applications. The memory is based on the four basic principles of memory: write, erase, read and store, and uses a single-level cell structure. This makes it ideal for applications that require low power consumption but still need rapid response times. In addition, the memory can be used for consumer electronics, automotive applications, and a variety of industrial applications.
The specific data is subject to PDF, and the above content is for reference
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