N25Q128A13E1441E Allicdata Electronics
Allicdata Part #:

N25Q128A13E1441E-ND

Manufacturer Part#:

N25Q128A13E1441E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 128M SPI 108MHZ 24BGA
More Detail: FLASH - NOR Memory IC 128Mb (32M x 4) SPI 108MHz ...
DataSheet: N25Q128A13E1441E datasheetN25Q128A13E1441E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (32M x 4)
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (6x8)
Base Part Number: N25Q128A13
Description

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Memory

N25Q128A13E1441E is a kind of memory device, which can be widely applicable in numerous electronic products, from the most basic desktop personal computers to the latest mobile communication devices.

The N25Q128A13E1441E is a high-performance non-volatile flash memory device that offers a storage capacity of 128Mb. It is designed and manufactured using the latest advanced process technology and state-of-the-art fabrication techniques. It combines fast access, high read/write speeds, and superior endurance with a powerful array of error correction and protection features.

Application Field

N25Q128A13E1441E can usually be found in a variety of applications, such as industrial automation, automobiles, mobile networks, GPS, computers and other embedded systems. It provides an ideal solution for any application that requires high-capacity non-volatile memory. It is also compatible with a variety of operating systems, making it suitable for a wide range of application scenarios.

In addition, the N25Q128A13E1441E can also be used for data logging, system updates and software development. It is an ideal solution for data intensive applications that require high-capacity and rapid data transfer rates.

Working Principle

The N25Q128A13E1441E operates by using a page buffer and a page register for data storage and retrieval. The page buffer is a small RAM array used to store data before it is written to the memory device. The page register is a larger RAM array that stores data that has been read from the memory device. When data is written to the N25Q128A13E1441E, it is first stored in the page buffer before it is committed to the memory device. The page register is used to retrieve data from the device. Both the page buffer and the page register can be accessed simultaneously, allowing for faster data transfer speeds.

The N25Q128A13E1441E also utilizes a number of error correction and protection features to ensure reliable data storage and retrieval. These features include advanced error correction code (ECC) for single, multiple and burst error detection, wear leveling algorithms for reliable data retention, and power fail protection to ensure reliability in the event of a power failure.

The specific data is subject to PDF, and the above content is for reference

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