N25Q512A13GSF40F TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	512Mb (128M x 4)
Clock Frequency:	108MHz
Write Cycle Time - Word, Page:	8ms, 5ms
Memory Interface:	SPI
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	16-SOIC (0.295", 7.50mm Width)
Supplier Device Package:	16-SOP2
Base Part Number:	N25Q512

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N25Q512A13GSF40F Memory

N25Q512A13GSF40F is a type of non-volatile memory noted for its fast processing speed and large storage capacity. It is typically used in computers and systems where high capacity memory storage and retrieval are required. N25Q512A13GSF40F memory is made up of integrated circuits (ICs) that can store large amounts of digital data over long periods of time. As a result, it is often used by organizations to store data that may have to be retrieved decades later.N25Q512A13GSF40F memory is typically found in microprocessors, digital signal processing (DSP) systems, embedded systems, programmable logic controllers, industrial PCs, and medical imaging devices. It is capable of executing instructions in the form of data, instructions, and programs. The memory chip can also be used for program execution instead of executing instructions from a processor, for example, in embedded systems and server applications.N25Q512A13GSF40F memory is organized and configured in a variety of ways, but is primarily composed of two types of memory cells: static random access memory (SRAM) and pseudo-static RAM (PSRAM). SRAM is made up of non-volatile cells that can retain their data when powered down. PSRAM is a type of non-volatile cell that can store two bits of data, but it is not as durable as SRAM.At the heart of N25Q512A13GSF40F memory is its use of electrically erasable programmables (EEPROMs) technology. EEPROM stands for \'electrically erasable programmable read-only memory\'. It allows the data stored in the memory to be changed or updated easily. This makes it an ideal choice for applications that need to save data that is frequently updated or continuously changing.The N25Q512A13GSF40F memory chip is designed to be used as an external memory device, which means that it can be connected to a processor or other device in order to provide additional storage. This type of memory device has a range of advantages, such as the ability to work with a wide range of processes and systems and its low power consumption.The N25Q512A13GSF40F memory chip operates on the principles of structured Random Access Memory (RAM). Structured RAM is a type of memory that is structured in a uniform way so that the memory contents can be accessed quickly and easily. This is achieved by the use of a high-speed serial interface, with data being sent and retrieved in a random fashion.The N25Q512A13GSF40F memory chip also employs a form of latency management. Latency is defined as the time taken for a processor to respond to a request for data from a memory device. The idea behind latency management is to reduce the amount of time the processor has to wait for data from the memory device. This is achieved by making sure that the memory device is able to provide the required data quickly and efficiently.The N25Q512A13GSF40F memory chip is a good choice for applications where large amounts of data need to be stored quickly, accurately, and reliably. Its fast processing speed and large storage capacity make it an ideal memory device for demanding applications. It is an excellent choice for organizations and businesses that require reliable memory storage and retrieval.

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