N25Q128A13E1240F TR Integrated Circuits (ICs)

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The N25Q128A13E1240F TR is a memory with the massively parallel flash memory, that has been developed by Micron Technology, Inc. Its application field, working principle and performance of it has been discussed in this article.

Application Field Of N25Q128A13E1240F TR

The N25Q128A13E1240F TR has proven to be widely applicable for memory storage applications in industrial, automotive and consumer electronics industries. It is widely used for data storage in industrial networks, industrial automation systems, automotive infotainment systems, consumer electronic devices like smartphones and tablets and in many other scenarios.

This memory is suitable for various applications like real-time memory for embedded systems, code storage for various software applications, and multimedia storage. It is also used in high-speed memory applications such as packet switching, set-top boxes, routers, and video.

The N25Q128A13E1240F TR is suitable for industrial, automotive, and consumer applications due to its excellent endurance, power consumption, and performance characteristics.

Working Principle Of N25Q128A13E1240F TR

The N25Q128A13E1240F TR RAM has a single-die architecture that supports 4K-bit page optimization, 8K-bit subpage read/programming, and 32K-bit erase capability. The operating speed is fast with a read speed of 80 Mb/s, program speed of 50 Mb/s and erase speed of 10 Kbits/s.

The N25Q128A13E1240F TR is based on the 3-transistor memory cell (NAND flash) technology. This type of flash memory utilizes a floating-gate transistor architecture with the source, drain and gate terminals for read, write and erase operations, respectively.

The memory cell works on three operating modes namely read, program and erase. During read operation, charge from the channel is transferred to the floating gate, while in write operation, charges are transferred from the gate to the floating gate. In erase operation, the charge stored on the floating gate is punched off.

Performance Of N25Q128A13E1240F TR

The N25Q128A13E1240F TR offers a high endurance performance that supports up to 1 million write cycles and erase/program cycles. It is also compatible with the advanced-tier of read/program/erase commands, which ensures high-speed operation at the lowest power consumption.

The N25Q128A13E1240F TR offers best-in-class reliability and endurance performance over the industrial temperature range of -40°C to +85°C. It also offers improved immunity to static electricity due to its level of charge content, which prevents data corruption and lengthens the device’s life cycle.

The N25Q128A13E1240F TR also offers improved data retention performance over the industrial temperature range, which ensures data integrity and prevents data loss. It also offers superior performance in areas like program/erase speed, power-up/down procedures, burst mode and addressing.

In summary, the N25Q128A13E1240F TR is an ideal solution for embedded applications which need reliable, high-performance memory due to its fast read speed, low power consumption and extended lifetime. Its compatibility with advanced commands, excellent endurance and reliability performance make it suitable for industrial, automotive, and consumer applications.

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