N25Q064A13ESE40G Allicdata Electronics
Allicdata Part #:

N25Q064A13ESE40G-ND

Manufacturer Part#:

N25Q064A13ESE40G

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 64M SPI 108MHZ 8SO
More Detail: FLASH - NOR Memory IC 64Mb (16M x 4) SPI 108MHz 8...
DataSheet: N25Q064A13ESE40G datasheetN25Q064A13ESE40G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (16M x 4)
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SO W
Base Part Number: N25Q064
Description

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N25Q064A13ESE40G is a standard 8-pin small outline package (SOP) memory device manufactured by Micron. It is part of the company’s IDT products, which includes products such as discrete flash modules and genrally-available embedded Flash memories. This package is designed especially for in-system programming (ISP) applications, meaning it can be programmed directly using the CPU, eliminating the need for a separate programming device to store data.

The N25Q064A13ESE40G is a non-volatile, 2.5V flash-based EEPROM memory device with the capacity to store up to 64Mbit of data. It is composed of four 16mibit memory components arranged into a 32 bit bus and a 16 bit bus. The chip is designed for applications that require high speed data throughput, low power consumption, and robust reliability for data storage in demanding and harsh environments. According to Micron, the package is developed with “state-of-the-art copper wire lamination process for high data rate performance and reliable operation at extreme temperatures.”

The N25Q064A13ESE40G is a high performance memory device and is typically used in applications that require large data storage capacities and fast data access. It is suitable for a wide range of embedded and industrial applications, including automotive, consumer electronics, medical, and portable memory applications. It is also widely adopted by IoT, cloud computing, and other data intensive applications.

When it comes to its working principle, the N25Q064A13ESE40G relies on a dual-bank internal structure, enabling fast access to data by using two physical copies of the same data. This means that the data can be stored in one bank and retrieved from the other bank as needed. This also allows for continuous data access without the need to wait for a certain amount of time for a data read operation to be carried out. In addition, the memory device’s architecture also allows for support for page-based asynchronous programming.

The N25Q064A13ESE40G is capable of storing commands and data in a pipeline, allowing for fast data access. This is a very useful feature for applications that require fast data retrieval. Furthermore, the memory device also features built-in error correction, allowing for error correction to be carried out during data storage and retrieval. The device also provides for in-system programmability, making it possible to store code and data without having to wait for external programming equipment.

All in all, the N25Q064A13ESE40G is a highly reliable memory device capable of storing large amounts of data while providing high performance at the same time. It is suitable for a variety of embedded and industrial applications, making it an ideal choice for those who seek efficient and reliable data storage solutions.

The specific data is subject to PDF, and the above content is for reference

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