N25Q128A13E1240E

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The N25Q128A13E1240E is a high-performance non-volatile memory device which is widely used in many applications. It is a 3-volt single level cell (SLC) NOR Flash memory and is available in a 8-pin small-outline integrated circuit (SOIC) package.

The N25Q128A13E1240E is ideal for data storage, code storage, and code execution applications requiring a small footprint. It has a top speed of 104 MHz, fast programming time, and a maximum erase time of 600 ms. The device also has an extended temperature range of -40 to +85°C.

An application field for the N25Q128A13E1240E is automotive. The device is ISO9001 certified and contains a comprehensive set of system-level control and error detection/correcting codes for automotive applications. It also meets automotive AEC-Q100 requirements for quality and reliability. This makes it highly suitable for use in applications involving safety, reliability, and extended temperature operation.

Another application field for the N25Q128A13E1240E is the industrial sector. It is suitable for use in applications where fast performance, a low-power design, and extended temperature operation are essential. The device can be used in industrial control systems and embedded systems.

The N25Q128A13E1240E has a wide range of features that make it attractive for use in applications involving data storage and code storage. These features include sector protection, single aspect locking, write protection, and a fully integrated ECC engine for improved error correction. It also has a 4kB block erase size that can help to reduce erase time.

The working principle of the N25Q128A13E1240E is based on Flash memory technology. Flash memory is non-volatile, meaning that it does not require a backup power source in order to retain its contents. When the device is powered on, the contents of the non-volatile memory are instantaneously available for reading and writing. The flash memory device consists of three separate memory blocks. The first memory block is used for data storage and code storage. The second memory block is used for sector protection and write protection. The third memory block is used for error correction and error detection.

The N25Q128A13E1240E is a fast and reliable non-volatile memory device. It can be used in a wide range of applications and is suitable for use in automotive and industrial applications where reliability, fast performance, and extended temperature operation are essential. The device also has a range of features that make it attractive for use in applications involving data storage and code storage.

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