N25Q128A13ESFH0E TR

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N25Q128A13ESFH0E TR is a memory device developed by Micron Technology that is specifically designed for automotive applications. It provides a rich array of features and specifications to support automotive applications, including: extended temperature range operation from -40°C to +125°C, error-correcting code (ECC) capability, endurance of up to one million write/erase cycles, low power consumption, and fast read and write performance. In addition, the N25Q128A13ESFH0E TR is manufactured with a process node of 23 nm, providing excellent reliability and high-density storage.

The N25Q128A13ESFH0E TR is a Flash memory device, which is a type of non-volatile memory that can retain data even when the power is turned off. It is organized as an array of memory cells, each containing a single bit of data. These cells can be written to and read from in order to store data. The N25Q128A13ESFH0E TR provides 128Mbits or 16MBytes of storage. This device is designed for automotive applications where extreme temperatures and power cycling are common, and is able to operate in temperatures from -40°C to +125°C without loss in performance or reliability.

The N25Q128A13ESFH0E TR is designed to be used in a variety of automotive applications. It can be used to store key data, such as mapping and navigation data, body control parameters, diagnostic and service records, and temperature calibration curves. It can also be used for storing software for embedded systems and infotainment systems, as well as for storing data for system re-configuration and boot-up code. The device is capable of both read and write operations with a maximum data rate of 200MB/s.

The N25Q128A13ESFH0E TR is capable of providing an extra measure of reliability through error correcting code (ECC) functionality. The ECC functionality allows the memory to detect and correct errors caused by bit flipping, guaranteeing data integrity. The N25Q128A13ESFH0E TR is also capable of supporting wear leveling, a technique that spreads data across many different memory blocks to minimize wear on any one block. This ensures that data will still be accessible even if a block of memory has become worn over time.

The N25Q128A13ESFH0E TR is designed for low power consumption and high reliability, making it ideal for applications where power conservation is a priority. It supports a low-power sleep mode and standby mode, allowing the device to be put in an inactive state when not in use. This allows for power savings without any loss in performance. Additionally, the device is capable of operating at high speeds with a read access time as low as 45 nanoseconds, enabling fast access to data when needed.

In conclusion, the N25Q128A13ESFH0E TR is an ideal choice for automotive applications. Its extended temperature range operation and high-reliability features make it suitable for reliable operation in the most demanding automotive environments. Its low power consumption and fast read and write performance enable it to be used in applications where power conservation is a priority, while its ECC and wear leveling features ensure data integrity and reliability. The N25Q128A13ESFH0E TR is an ideal choice for any automotive application requiring robust, reliable, and power-efficient memory.

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