N25Q128A23BF840E

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N25Q128A23BF840E memory module is a Flash memory device which is constructed with nonvolatile floating gate NAND Cell technology. It offers an embedded memory solution which provides fast access, high performance, high reliability and low power consumption. It is suitable for applications such as embedded systems, data storage, computer systems and portable devices. This article will introduce its application field, working principle, specification and performance.

Application Field

N25Q128A23BF840E memory is widely used in embedded systems, industrial automation, data storage applications, among others. It offers a reliable solution for systems in which mission-critical data needs to be stored, processed and retrieved in an efficient and secure way. In addition, its low power consumption allows it to be used in systems with limited energy resources, such as portable and mobile devices.

In the small form factor, N25Q128A23BF840E memory offers a rugged and reliable solution for industrial control systems and embedded systems. It is suitable for storing control data and system logs for industrial control systems and embedded systems. With its high integration and excellent performance, N25Q128A23BF840E memory can also reduce system unstable problems and ensure system data integrity.

N25Q128A23BF840E memory is also used in data logging and recording applications. Data logging and recording systems need to operate continuously and without interruption, so require reliable and high-performance memory. N25Q128A23BF840E memory meets these requirements, allowing data storage and retrieval in a secure and efficient way.

Working Principle and Features

N25Q128A23BF840E memory uses a floating gate NAND cell technology, which means that it can store data in nonvolatile memory cells using electrical charges. This technology allows the cells to retain their data even when there is no power supply. It also offers high endurance cycles and fast program/erase speeds.

The device has an 8-bit multiplexed address and data bus architecture which allows for faster access to data. It also has a high-performance synchronous/asynchronous controller which enables faster access to data, along with error-correction capabilities. The controller can be programmed to automatically detect and repair errors, improving reliability and reducing downtime. All these features contribute to making N25Q128A23BF840E memory a reliable, low-power and high-performance solution.

Specifications and Performance

N25Q128A23BF840E memory has a minimum operating voltage of 2.7V. It requires a maximum of 35mA of current for read and write operations, and 1.5mA for standby operations. The device offers a uniform 128KByte memory array, organised into 64KWord blocks of 8Kbits each. It has a full-power performance of 32MBytes/s, with a maximum operation temperature range of 85°C.

The device is also designed to meet real-time operating requirements, with a program/erase operation time of up to 36μs. This makes it suitable for embedded systems and industrial automation tasks. It has a maximum cycle endurance of 10,000cycles and a minimum data retention time of 20 years.

N25Q128A23BF840E memory offers a high-performance, reliable and low-power solution for intelligent storage and retrieval of data in a wide range of applications. With its fast program/erase speeds and reliable error-correction capabilities, it is ideal for mission-critical storage applications, industrial control systems and embedded systems.

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