NDF10N60ZG-001

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NDF10N60ZG-001 is a p-channel enhancement-mode Power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) from the N-Series which is designed for power switching applications. It is based on advanced Field-Stop Trench technology which provides faster switching performance, better avalanche ruggedness and improved body-diode ratings.

The NDF10N60ZG-001 MOSFET uses a Silicon substrate and has an advanced level of integration, making it an ideal choice for a variety of power switching applications. It has a maximum rated current of 60A, a breakdown voltage of 10V, and a threshold voltage of -3 V. With its low on-resistance, high-frequency operation and high integration level, it is suitable for various switched power applications in the automotive, consumer, industrial and lighting segments.

The NDF10N60ZG-001 MOSFET is designed to provide low on-resistance and high switching speeds for high frequency applications. It has a low output capacitance, which reduces power consumption and provides high-speed switching. The device also has a variety of protection features such as over-temperature protection, active clamping and a low gate-charge, which makes it highly suitable for switching power applications.

The working principle of the NDF10N60ZG-001 MOSFET is based on the use of an electric field to control the conductivity of a semiconductor material. When a voltage is applied to the gate of the MOSFET, a depletion region is created in the transistor channel near the gate, which reduces the available channel area and increases the resistance of the channel. The channel resistance is then lowered by increasing the gate voltage, thus allowing current to flow through the transistor. Thus, the voltage applied to the gate determines the resistance of the channel, and the current flowing through the transistor is controlled by the gate voltage.

The NDF10N60ZG-001 MOSFET is an ideal solution for many applications such as motor control, power supplies, and white goods. Its low on-resistance, fast switching speeds, and high-frequency capabilities make it a great choice for applications that require reliable performance and high power efficiency. Additionally, its design makes it immune to any sudden changes in temperature, making it suitable for a range of applications that require reliable operation even in harsh environments.

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