| Allicdata Part #: | NDF10N60ZGOS-ND |
| Manufacturer Part#: |
NDF10N60ZG |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 600V 10A TO-220FP |
| More Detail: | N-Channel 600V 10A (Tc) 39W (Tc) Through Hole TO-2... |
| DataSheet: |  NDF10N60ZG Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220FP |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 39W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1645pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 68nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 750 mOhm @ 5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The NDF10N60ZG is a high performance MOS FET which is suited to many application fields. It offers efficient, fast switching and has been designed to deliver both high current and voltage capabilities while maintaining its low on-state impedance.
The NDF10N60ZG is a part of the single N-channel MOSFET family. This type of FET is the simplest type of semiconductor device available, with only three terminal for its operation. These terminals are the drain, the gate and the source.
The NDF10N60ZG is a depletion mode MOSFET. This means that it is normally off without any applied voltage across its gate. When an appropriate voltage is applied to the gate, the current will flow from the source to the drain. The magnitude of the drain-source current can be controlled by varying the applied gate voltage. In this way, the NDF10N60ZG can be used to control an external circuit, such as an LED or a motor.
The NDF10N60ZG offers high current carrying capabilities, allowing it to handle up to 10A. The maximum drain-source voltage also is relatively high at 60V. Therefore, the NDF10N60ZG is well suited to many applications in the high-power, high-voltage realm, such as power tools, automotive electronics and industrial automation.
The NDF10N60ZG has a low drain-source on-resistance of 0.0075ohm. This low on-state impedance makes it suitable for switching applications where a low loss of energy is desired. In addition, the NDF10N60ZG has a low gate-drain capacitance of 3.2 pF. This low capacitance ensures fast switching times, making the NDF10N60ZG suitable for applications where a fast response time is desired.
The low on-state resistance and the low gate-drain capacitance, combined with its high voltage and current capabilities, make the NDF10N60ZG an ideal choice for many applications. The NDF10N60ZG can be found in a wide variety of electronic devices as it is a versatile MOSFET that is suitable for a range of applications.
The specific data is subject to PDF, and the above content is for reference
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