NDF11N50ZH

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The NDF11N50Z is a silicon N-channel power field-effect transistor available in a TO-220AB or D2PAK package. It is an enhancement mode, high-voltage and high-current device designed for electronic switching applications such as audio amplification, motor control, and solenoid/relay control. This transistor is also capable of high-frequency switching and thus is often used as an electronic switching device in audio amplifiers and other equipment.

This FET can be used for a wide range of applications and its working principle is simple. An FET works by the application of a voltage across its source and drain terminal to establish a conducting channel between them. This channel is made of wired P-type semiconductor material. A gate electrode connected to the gate terminal of the FET controls the width of the channel and thus, the drain current. An external voltage applied to the gate terminal of FET is used to control the current flow in the device. It is basically a voltage controlled current source.

The NDF11N50Z has an RDS (ON) of 0.10 ohms, making it highly efficient. Its maximum continuous drain current is 11A, making it suitable for applications such as audio amplifier, motor control, and solenoid/relay control. It also has a maximum drain-source voltage rating of 500V and a maximum power dissipation of 13W. These features make it suitable for high-temperature and high-power applications.

The NDF11N50Z has a number of features that make it highly versatile. It has a low on-state resistance, making it highly efficient. It also has a fast transient response, making it suitable for applications such as motor control. Furthermore, it has a high breakdown voltage, making it suitable for high-voltage applications.

In addition to its versatility, the NDF11N50Z has a number of advantages. It is highly reliable and has a low failure rate. It also requires very little gate drive current, reducing the system cost. Additionally, it has a low input capacitance, allowing it to be used in high frequency switching applications. Furthermore, it offers low thermal resistance, meaning it is suitable for high-temperature applications.

In conclusion, the NDF11N50Z is a versatile, reliable and efficient FET suitable for a wide range of applications. Its low-on state resistance, fast transient response and high breakdown voltage make it suitable for high-voltage and/or high-current applications such as audio amplification, motor control and solenoid/relay control. Furthermore, it requires very little gate drive current and has a low input capacitance making it suitable for high-frequency switching applications. Lastly, its low thermal resistance makes it suitable for high-temperature applications.

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