Allicdata Part #: | NDF11N50ZGOS-ND |
Manufacturer Part#: |
NDF11N50ZG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 12A TO-220FP |
More Detail: | N-Channel 500V 12A (Tc) 39W (Tc) Through Hole TO-2... |
DataSheet: | NDF11N50ZG Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 100µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 39W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1645pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 69nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 520 mOhm @ 4.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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.The N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET), type designation NDF11N50ZG, is a high-power, high-speed switching device used for the control of current in electronic applications. It is a key component in many different electronic circuits, from high speed telecommunications systems to computer memory and data processing applications. In addition, NDF11N50ZG transistors are used for motor control, analog signal conditioning and power conversion, to name a few.
The NDF11N50ZG is a single-channel, dual-gate MOSFET device, which means that it has two gates or terminals which control the flow of current across the device. These gates are controlled by using a voltage input to either the source or drain terminals. This voltage input can range from +5v to -5v, depending on the type of application. When the voltage is applied at the drain terminal, the transistor turns on and conducts current between the source and drain terminals, while when the voltage is applied at the source terminal, the transistor turns off.
The NDF11N50ZG is a high-power transistor and can handle up to 500 watts of power. It is also capable of operating at high frequencies, up to 5MHz. In addition, the device is rated for a maximum drain-source voltage of 100V, making it well-suited for applications requiring high voltage switching, such as motor control. The maximum drain-source current rating for the device is 11A, allowing for efficient power conversion.
The NDF11N50ZG is typically used in high-power applications, such as motor control and power conversion, due to its high power rating and high speed operation. It is also used in high-speed telecommunications systems, digital-to-analog signal conversions, and power supply regulation. In addition, it can be used in a variety of other applications, such as audio amplification, power supply sequencing, and amplifier design.
The working principle of the NDF11N50ZG is based on the transistors voltage versus current relationship. When a voltage is applied to the drain terminal, current will flow between the source and drain terminals, as long as the gate voltage remains at the threshold level of -5v. This threshold voltage acts as a switching point, which controls the flow of current across the device. As the drain voltage increases, the current flowing between the source and drain terminals will also increase, allowing for high power switching.
The NDF11N50ZG is a very versatile device, and its application field is far-reaching. This transistor is used in a variety of applications, from high-power motor control and power conversion to audio amplification, power supply sequencing, and digital-to-analog signal conversion. Its high power rating and high speed switching make it ideal for power-sensitive applications and high-frequency operation.
The specific data is subject to PDF, and the above content is for reference
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