NSS40200LT1G Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NSS40200LT1G is a NPN bipolar junction transistor (BJT) designed by ON Semiconductor, an American company that develops and manufactures electronic components. The NSS40200LT1G is a single transistor, which means it has two junctions, a collector, and an emitter, between the two junctions. It handles currents up to 200mA with a voltage range of 40 VDC. This makes the NSS40200LT1G an ideal device for many applications such as audio amplifiers, instrumentation amplifiers, and power sources.

The working principle of any BJT is based on the characteristic that when a current is applied to the base junction, a proportional current will flow into the collector. This current is then amplified by the BJT and current is then passed to the emitter. To understand this better, it is important to know the three regions, or layers, that compose a BJT. The emitter is the layer that inputs electrons. The base, located between the emitter and collector, is where the electrons pass through. Finally, the collector, which is the most heavily doped region, collects the electrons. When biased in one direction, current flows from the emitter to the base, then from the base to the collector, making it a current-controlled device.

The NSS40200LT1G has many applications in the world of electronics. For example, it is commonly used in audio amplifiers because it can handle large current levels and allow for a wide range of gain settings. Additionally, this device can be used in instrumentation amplifiers, which are typically used in medical electronics. It can also be used in power sources, allowing more efficient power delivery to other components in an electronic system. The NSS40200LT1G can also be used as a switch, allowing an electronic device to switch between an on and off state.

Due to its versatility, the NSS40200LT1G is an incredibly popular transistor. It’s available in a variety of packages, allowing for flexible board mounting options. With a maximum continuous collector current of 200mA, this device is well suited for small- and medium-power applications. Additionally, its low saturation voltage, high breakdown voltage, and fast switching speed make it ideal for high-frequency applications.

In conclusion, the NSS40200LT1G is an ideal bipolar junction transistor for many applications, including audio amplifiers, instrumentation amplifiers, power sources, and switches. It has a wide range of capabilities, including low saturation voltage, high breakdown voltage, and fast switching speed. The NSS40200LT1G is available in a variety of packages, allowing for flexible board mounting options.

The specific data is subject to PDF, and the above content is for reference