NSS40501UW3T2G Discrete Semiconductor Products

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NSS40501UW3T2G is a single-transistor bipolar junction (BJT) device made from Si materials. It is commonly used in a variety of applications, including power management, RF applications, analog switches and amplifiers.

Application Fields

The NSS40501UW3T2G is one of the most widely used transistors for a variety of applications. It can be used for power management applications, as it is equipped with a wide operating voltage range of 10V-30V with a continuous drain current of 5A. It is also suitable for use in RF applications due to its low capacitance of 0.7pF, which ensures a good switching speed. It is also useful for analog switches, as well as providing good level shifting capability. Lastly, it can be used in amplifiers, as it has the capacity to amplify up to 300MHz.

Working Principle

Bipolar transistors function due to the presence of a barrier layer between the emitter and collector. The emitter and collector can be thought of as the two terminal ends of a resistor. When a small voltage is applied across the emitter and collector terminals, electrons are drawn to the collector and the current between them increases. This allows current to flow from the emitter to collector, thus amplifying the voltage applied at the input. For the NSS40501UW3T2G, the maximum collector current is 5A with an input voltage of 30V.

Summary

NSS40501UW3T2G is a single-transistor bipolar junction device which can be used for power management, RF applications, analog switches and amplifiers. It has a wide operating voltage range of 10V-30V and a respective of collector current of 5A. It has a low capacitance of 0.7pF and a high frequency response of up to 300MHz. Its working principle is based on the fact that the presence of a barrier layer between the emitter and collector allows current to flow when an input voltage is applied.

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