NSS40301MZ4T1G Discrete Semiconductor Products

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The NSS40301MZ4T1G belongs to the Transistors – Bipolar (BJT) – Single category. It is an NPN wideband transistor that is used in a variety of applications such as amplifying signals in radios, electronic amplifiers, and other electronic circuits. The device is well-suited for applications where a wide bandwidth is needed, as it can handle a wide range of frequencies.

The NSS40301MZ4T1G transistor is composed of a P-type and an N-type semiconductor material. The P-type semiconductor has a majority of holes, while the N-type semiconductor has a majority of electrons. The transistor’s gate electrodes are connected with a small distance between them. When the gate voltage is increased, the electrons in the N-type semiconductor are drawn towards the gate, leaving a large number of holes in the P-type material. This establishes a channel between the gate and the source electrodes.

As the current flows from the source to the drain, the voltage which is applied to the gate controls the amount of current passing through. This is known as a ‘Field Effect Transistor’, as the current flows through the channel which is established when a voltage is applied to the gate. This makes the NSS40301MZ4T1G transistor suitable for amplifying and switching applications.

The NSS40301MZ4T1G’s features and specifications make it an ideal device for a wide range of applications. It has an extremely wide operating frequency range of up to 200MHz, and is capable of high gain and high efficiency. It has a maximum collector current of 1A, a maximum collector-emitter voltage of 8V, and a Collector-Emitter Saturation Voltage of 1.5V. It also has a max power dissipation of 625mW and a functional temperature range of -55° to +150° Celsius. All of these features make the NSS40301MZ4T1G well-suited for radio receivers, high speed switching, and Pulse Width Modulated (PWM) circuit applications.

The multiple fields of application for the NSS4-301MZ4T1G transistor make it a very versatile device and it is widely used in modern electronic systems. It is well-suited for applications where high gain, high efficiency, and wide bandwidths are desired. It is an ideal choice for a wide range of applications such as amplifiers, radio receivers, pulse width modulation, and high speed switching.

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