Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors - Bipolar (BJT) - Single

The NSS40500UW3T2G is a single-die, planar n-channel vertical MOSFET with ultra-low on and off-state resistance and currently very popular in the field of power electronics and power systems. It is widely used in various applications and is characterized by very low gate and drain-source resistance (R DS(ON)). It also has a high current carrying capacity and temperature capabilities.

Application Field

The NSS40500UW3T2G is primarily designed for switching circuits in low voltage power switching applications. Due to its very low on-state resistance and its ability to carry a large number of current pulses, it can be used in applications such as power management systems, power converters, power supply regulation and power auxiliaries. It is also well suitable for consumer, automotive, industrial and telecom applications.

Working Principle

The NSS40500UW3T2G works on basic principle of a metal-oxide-semiconductor field-effect transistor (MOSFET). It consists of a source and drain, connected with a gate electrode. The gate electrode has a negative charge compared to the source and drain. When a voltage is applied to the gate, electrons become trapped in the oxide layer between the gate and the source which decreases the resistance of the channel and current flow increases. When the voltage is increased or decreased from its original state, the resistance of the channel also increases or decreases and current flow is also regulated.

This MOSFET also has a built-in diode protection element which can prevent damage caused by reverse voltage. It is also characterized by its very low gate and drain-source resistance, which is its main advantage over other MOSFETs. This feature enables the NSS40500UW3T2G to be used in high frequency, low power consumption applications.

Conclusion

The NSS40500UW3T2G is an ideal choice for applications where very low on and off-state resistances and high current carrying capacity are desired. It can be used in power supply regulation, power converters, power management systems, power auxiliaries as well as in consumer, automotive, industrial and telecom applications. Its low gate and drain-source resistance and diode protection elements make it suitable for high frequency and low power consumption applications.

The specific data is subject to PDF, and the above content is for reference