NSS40302PDR2G Discrete Semiconductor Products |
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Allicdata Part #: | NSS40302PDR2GOSTR-ND |
Manufacturer Part#: |
NSS40302PDR2G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN/PNP 40V 3A 8SOIC |
More Detail: | Bipolar (BJT) Transistor Array NPN, PNP 40V 3A 100... |
DataSheet: | NSS40302PDR2G Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN, PNP |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 115mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 180 @ 1A, 2V |
Power - Max: | 653mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
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Introduction
NSS40302PDR2G is an array of bipolar junction transistors (BJTs) designed to provide high voltage and high current switching capabilities in a single package. It is typically used for power control applications and motor control applications. This article will explore the applications of the NSS40302PDR2G, and its working principle.
Applications
The NSS40302PDR2G is primarily used in automotive, industrial and medical applications due to its high-voltage, high-current switching capabilities. Specifically, the NSS40302PDR2G is used for:
- Elevator Motor Control
- Actuator Control
- Electric Motor Control
- Solar Panel Power Control
- Automation Control
- Robotic Control
- Medical Equipment Control
The transistors within the NSS40302PDR2G can be used in any application requiring high-voltage, high-current switching capabilities. The NSS40302PDR2G is becoming increasingly popular due to its low power consumption, low cost, and its ability to handle a wide range of temperatures and power levels.
Working Principle
The NSS40302PDR2G is composed of a series of three NPN transistors. The transistors are connected in a common-emitter configuration, with the transistors arranged in a series, with the source connected to ground and the drain connected to the load. When a signal is applied to the base of the transistors, current passes through the transistors and is delivered to the load.
The NSS40302PDR2G is capable of providing high-voltage and high-current switching capabilities due to its three transistors. The three transistors are connected in series, effectively doubling the voltage and current capabilities of the device. This allows the NSS40302PDR2G to switch high voltages and high current levels, which is necessary for certain high-power control applications.
The NSS40302PDR2G is also able to operate at large temperature ranges. The transistors are protected by an EMC (electromagnetic compatibility) coating, which helps the transistors to operate at a wide range of temperatures. This is essential for applications such as robotics, where the transistors may be used in environments with extreme temperatures.
Conclusion
The NSS40302PDR2G is a versatile array of bipolar junction transistors (BJTs) designed for use in high-voltage and high-current switching applications. It is particularly well-suited for automotive, industrial, and medical applications, due to its high switching capabilities, low power consumption, and a wide range of temperatures and power levels. The transistors in the NSS40302PDR2G are protected by an EMC (electromagnetic compatibility) coating, allowing them to handle high levels of voltage and current.
The specific data is subject to PDF, and the above content is for reference
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