NSS40600CF8T1G Discrete Semiconductor Products |
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Allicdata Part #: | NSS40600CF8T1GOSTR-ND |
Manufacturer Part#: |
NSS40600CF8T1G |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS PNP 40V 6A 8CHIPFET |
More Detail: | Bipolar (BJT) Transistor PNP 40V 6A 100MHz 830mW S... |
DataSheet: | NSS40600CF8T1G Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.14570 |
6000 +: | $ 0.13630 |
15000 +: | $ 0.12690 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 6A |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 220mV @ 400mA, 4A |
Current - Collector Cutoff (Max): | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 220 @ 1A, 2V |
Power - Max: | 830mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | ChipFET™ |
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NSS40600CF8T1G is one of the types of transistors - bipolar junction transistor (BJT). It\'s a single BJT structure and consists of a collector, base, and emitter. Its features include low collector-emitter saturation voltage, good hFE linearity, low turn-on and turn-off times, fast switching speed and high current gain. NSS40600CF8T1G can be used in a wide range of applications, such as switch mode power supplies, motor drives, relays, amplifiers, power converters, and light dimmers.
The working principle of NSS40600CF8T1G is based on the physical behavior of the two types of semiconductor materials it contains. The two main components of the device, the collector and the base, are separated by a thin layer of silicon-based material. This layer then acts as an insulator between the two and enables the transfer of electrons between the two.
The collector is a heavily doped semiconductor material, while the base is lightly doped and has an oppositely charged terminal known as the emitter. When there is a voltage present and the emitter is connected to the collector, electrons are released from the emitter and are attracted to the collector through the base region. This is known as the bipolar effect and is responsible for the transfer of electric current between the two.
When a base current is applied to the NSS40600CF8T1G, a voltage is generated across the collector-emitter terminals. This voltage is referred to as the collector-emitter voltage (Vce). The gain of the device is then determined by the ratio of the collector-emitter voltage (Vce) to the base current (Ib).
The gain of the NSS40600CF8T1G can be further adjusted by changing the current flowing through the device. This can be done by applying a higher or lower voltage at the base, thus increasing or decreasing the current flowing through the device accordingly. This can be useful for applications where adjustment of the gain of the device is required.
In addition, NSS40600CF8T1G can be used in circuits with low-noise operation and small form factor as well. Its low turn-on/turn-off times and high current gain can also be used in applications where fast switching speeds are needed.
Overall, NSS40600CF8T1G is an excellent choice for a wide range of applications. Its physical properties, as well as its ability to adjust the gain, make it suitable for many applications. From its use in motor drives and power converters, to its use in amplifiers and light dimmers, NSS40600CF8T1G can deliver excellent performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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