NSS40301MDR2G Discrete Semiconductor Products |
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Allicdata Part #: | NSS40301MDR2GOSTR-ND |
Manufacturer Part#: |
NSS40301MDR2G |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS 2NPN 40V 3A 8SOIC |
More Detail: | Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 3A... |
DataSheet: | NSS40301MDR2G Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.18225 |
5000 +: | $ 0.16968 |
12500 +: | $ 0.16758 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | 2 NPN (Dual) |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 40V |
Vce Saturation (Max) @ Ib, Ic: | 115mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 180 @ 1A, 2V |
Power - Max: | 653mW |
Frequency - Transition: | 100MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Base Part Number: | NSS40301 |
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The NSS40301MDR2G is an integrated 32-array manufacturing device designed for use in some of the more modern applications such as telecommunication, audio equipment and automobile applications where high reliability and low power consumption is critical. The NSS40301MDR2G integrates all the necessary components to provide the desired feature set and controls and can be used in applications where either significant or critical functionality is required.
The NSS40301MDR2G is composed of a PNP transistor, a NPN transistor, an integrated circuit and an FET network, with each of these components working in concert to achieve precise control of the current within the application. Each of these components is part of the integrated circuit, which is capable of providing logic levels and providing feedback signals to achieve fast and accurate resolution of the application. The integrated circuit is also capable of providing protection against over-current and under-current and other faults.
The NSS40301MDR2G has extended temperature range which makes it suitable for application in different environmental conditions, such as industrial and automotive applications. The device has a superior ability to withstand voltage spikes, making it ideal for automotive and mobile applications subject to variable power supply voltages. The device also has low current draw and power dissipation, making it suitable for battery powered applications. In addition, its low power drain and low operating temperature makes it an ideal solution for applications operating in extreme temperatures.
The NSS40301MDR2G working principle is based on the bipolar transistor technology. Basic operation of the NSS40301MDR2G is similar to that of a bipolar transistor network but with the addition of an IC within the package. The integrated circuit within the package is utilized to provide control signals to the NPN and PNP transistors and to control the FET network. The control of the current within the application is normally achieved through the PNP transistor, which is the primary control element. The NPN transistor acts as the amplifier and adds additional control to the circuit. This type of control system is used widely in analog and digital logic applications where linear output is required.
In the NSS40301MDR2G application field, its ability to be used in various conditions makes it suitable for a wide range of applications from Telecommunication, Audio Equipment and Automotive applications. Its high performance and efficiency makes it an ideal solution for applications requiring fast processing and precise control. The NSS40301MDR2G also has a low power consumption, making it ideal for smaller systems like mobile and battery-powered applications. The flexibility and reliability of the NSS40301MDR2G make it an excellent choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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