Allicdata Part #: | NTD70N03R-001OS-ND |
Manufacturer Part#: |
NTD70N03R-001 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 25V 10A IPAK |
More Detail: | N-Channel 25V 10A (Ta), 32A (Tc) 1.36W (Ta), 62.5W... |
DataSheet: | NTD70N03R-001 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | I-PAK |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.36W (Ta), 62.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1333pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13.2nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta), 32A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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NTD70N03R-001 application field and working principle
The NTD70N03R-001 is a logic level N-Channel Enhancement Mode MOSFET. Its small size, high-power handling, and low on-resistance make it useful for a wide range of application fields. The device uses a single-gate construction, with the N-channel MOSFET ingrained on the same die.
Although the NTD70N03R-001 has similar properties to other MOSFETs, it has a few distinct characteristics that make it stand out. The N-type MOSFET is constructed in single-gate format and comprises an insulated gate structure that is integrated into the die of the semiconductor. This construction allows for lower on-resistance and better temperature stability than other MOSFETs. When compared to the P-type MOSFET, the NTD70N03R-001 has a gate threshold voltage of 4 volts instead of the more typical 8 volts of the P-type.
The NTD70N03R-001 is well suited for a variety of high-power environments. It is able to handle up to 70 volts and 20 amperes in continuous operation, making it capable of driving large loads. It is also capable of fast switching speeds, enabling rapid switching of large currents. This makes it suitable for applications such as power conversion, inverters, motor control and power amplifiers.
The NTD70N03R-001 works on the principle of a MOSFET. It is a three terminal component, composed of a source terminal, drain terminal, and gate terminal. The device works based on the transfer of charge carriers between the source and drain terminals. When a voltage is applied to the gate terminal, it creates an electric field that attracts and accelerates electrons from the source to the drain. This allows the charge carriers to pass through, creating a current flow.
The NTD70N03R-001 has a variety of application fields. It is commonly used in power management systems and motor drivers where fast switching is required. It is also often used in LCD displays and power converters, and is suitable for use in a range of industrial and consumer electronics.
While the NTD70N03R-001 is a fabulous MOSFET, it is important to understand the device\'s characteristics before diving into a design project. Due to its small size, it is prone to excessive heating in high power switching applications. This is why it should be used together with appropriate thermal management measures, such as a metallic heat sink, to keep it running safely.
In conclusion, the NTD70N03R-001 is a great MOSFET for a variety of power management and switching applications due to its small size, high-power handling and low on-resistance. Its single-gate construction and gate threshold voltage of 4 volts make it ideal for use in devices that need to quickly switch large currents. As with all MOSFETs, appropriate thermal management should be used in high power applications, to ensure its safe and reliable operation.
The specific data is subject to PDF, and the above content is for reference
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