NTD70N03RT4 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	1.36W (Ta), 62.5W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1333pF @ 20V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	13.2nC @ 5V
Series:	--
Rds On (Max) @ Id, Vgs:	8 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	10A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss):	25V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The NTD70N03RT4 is an enhancement-mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) from the NT series by ON Semiconductor. It can be used to provide high-back-voltage power control switching and switching applications. It features low on-resistance and maximum drain current of 4A.The NTD70N03RT4 is designed to handle inductive switching. It utilizes the force of an electric field to create an electric current within the device. The electric field is established when a bias voltage is applied to the gate of the MOSFET, which influences the source to drain current flow. The drain current can be experienced in many types of applications; its primary application is as a high-side switch.The NTD70N03RT4 enjoys an array of interesting features such as a maximum drain-source On-state Resistance (Rdson) of 4 mΩ, a maximum drain current of 4A, a fast switching speed of 4V/nS, a maximum gate-source voltage of ±20V, an operating temperature range of -55°C to 175°C, and a power dissipation of 2.41W.The most useful applications of NTD70N03RT4 are switching and motor control, power supplies, and power amplifiers. It is especially suitable for switching high current on and off quickly with minimal losses. It is highly recommended for applications that generate high power and require high efficiency.The NTD70N03RT4 is preferred over BJTs (Bipolar Junction Transistors) because it offers a higher power-to-weight ratio, faster switching speed, and higher current capacity. Additionally, it is much easier to drive than BJTs, due to its small Gate capacitance.The NTD70N03RT4 can safely be used without the risk of malfunctions if it is within the rated specifications. It can be powered using 5V, 12V, and 24V power supplies, and it is specially designed for use in industrial and consumer electronics devices. Its maximum current rating makes it an ideal choice for heavy-duty devices that require high current capability.In conclusion, we can conclude that the NTD70N03RT4 is an enhancement-mode MOSFET from ON Semiconductor\'s NT series, suitable for providing power control switching and switching applications. With a low on-resistance and maximum drain current of 4 A, it is an ideal choice for applications such as switching and motor control, power supplies, and power amplifiers. It offers a high power-to-weight ratio and fast switching speed, making it an excellent choice for high power, high efficiency applications.

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