NTD70N03RT4G Discrete Semiconductor Products |
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Allicdata Part #: | NTD70N03RT4GOSTR-ND |
Manufacturer Part#: |
NTD70N03RT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 25V 10A DPAK |
More Detail: | N-Channel 25V 10A (Ta), 32A (Tc) 1.36W (Ta), 62.5W... |
DataSheet: | NTD70N03RT4G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.36W (Ta), 62.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1333pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 13.2nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta), 32A (Tc) |
Drain to Source Voltage (Vdss): | 25V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NTD70N03RT4G is a single P-Channel MOSFET from ON Semiconductor that offers fast switching speeds and a low gate-source threshold voltage. It utilizes a metal oxide semiconductor (MOS) structure and can handle 55A of continuous drain current.
A MOSFET is a type of Field Effect Transistor (FET) that essentially works as an electronic switch by controlling the flow of electricity between the drain and source. It follows the same basic operating principle as a normal FET, but instead of using two PN junctions, MOSFETs use an insulated gate to control the flow of current. The gate voltage alters the resistance between the source and drain, allowing current to pass between the two.
The NTD70N03RT4G is designed to take advantage of the low-threshold voltage and fast switching speed of the MOSFET structure to provide a low-power, high performance device for applications such as switching power supplies, synchronous rectification, motor control, DC/DC converters and other power circuit applications. Its drain-source breakdown voltage of 70V is suitable for most applications, and its 11-ohm maximum on-resistance at 4.5V gate drive allows for lower power losses during operation. With a low gate charge of 73nC, this MOSFET has one of the lowest drive voltages on the market, making it an efficient and cost-effective solution for power-sensitive applications.
The NTD70N03RT4G is available in two packages-the PowerSO-8 and the surface-mount PowerFLAT-TAB. It also offers a wide range of gate oxide thicknesses and drain-source voltages, making it suitable for a variety of circuit applications.
Thanks to its MOSFET technology, the NTD70N03RT4G offers numerous benefits over traditional FETs. These benefits include low-power operation, higher current-carrying capacity, high speed, and wide voltage range. Furthermore, since MOSFETs have no gate current, they are capable of switching faster than traditional FETs. This makes the NTD70N03RT4G an ideal choice for high-speed, low-power applications.
Overall, the NTD70N03RT4G is an excellent choice for high-current, low-power applications needing fast switching speeds and low gate-source threshold voltage. This MOSFET is small, efficient, and cost-effective, making it the perfect choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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