NTD78N03-35G

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-251-3 Stub Leads, IPak
Supplier Device Package:	I-PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	1.4W (Ta), 64W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2250pF @ 12V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	35nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	6 mOhm @ 78A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	11.4A (Ta), 78A (Tc)
Drain to Source Voltage (Vdss):	25V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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NTD78N03-35G is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) which is widely used in various applications. This device is mainly used in power management, especially in power electronic devices and electric power switches. In this article, we will discuss the application field and working principle of NTD78N03-35G.A MOSFET is a three-terminal device consisting of a source, drain and gate. It has a metal-oxide-semiconductor structure that enables it to operate as an efficient switch. This is why it is widely used in various electronic applications. The NTD78N03-35G is a single MOSFET, which is a device with only one channel instead of two. It is also known as a single gate MOSFET or SGMOSFET. It is mainly used as a switch in power management applications, particularly electric power switches.The NTD78N03-35G has 8 amps continuous drain current (ID) rating and a 35V drain-source voltage (VDS). It has a 25V gate-source voltage (VGS) rating and a 0.6V threshold operating voltage (VTH). It also has a 0.06 ohm drain-source on-resistance (RDS(on)) and a maximum on-state resistance (RDS(max)). It is also capable of high-speed switching and is designed for use in multiple chip packages.The application field of NTD78N03-35G includes power management, electric power switches, voltage regulators, rectifiers, motor drives, and other related applications. It can be used to control the power of devices by turning off the power as needed. It can also be used to regulate the voltage or current of devices. It is also used in motor drives, such as electric vehicles, to control the speed and power of motors.The working principle of single gate MOSFETs can be explained in the following manner. When the gate voltage is applied, it creates a voltage drop between the source and the drain, which is known as the drain-to-source voltage (VDS). The higher the VDS, the higher the current that flows through the MOSFET. The amount of current flowing through the MOSFET is determined by the amount of gate voltage that is applied. When the gate voltage is zero, the MOSFET is in a "cut-off" state, where very little current is flowing and the device is basically off. When the gate voltage is increased, the MOSFET is "on," which allows for much higher currents to flow. This device can be used to switch power, regulate voltage or current, and control the speed and power of motors. It is designed for use in many power management applications, and can be an efficient switch because of its low on-resistance and high-speed switching capability. Its low power loss makes it an ideal choice for power management and maximum efficiency. NTD78N03-35G is an efficient MOSFET for power management applications. Its single gate structure makes it easy to use, and its low on-resistance and high-speed switching capabilities make it an ideal switch for power management and electric power switches. Its wide range of applications make it a popular choice in a variety of electronic applications.

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