Allicdata Part #: | NTDV18N06LT4G-ND |
Manufacturer Part#: |
NTDV18N06LT4G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 18A DPAK |
More Detail: | N-Channel 60V 18A (Ta) 2.1W (Ta), 55W (Tj) Surface... |
DataSheet: | NTDV18N06LT4G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta), 55W (Tj) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 675pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 65 mOhm @ 9A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The NTDV18N06LT4G transistor is a single high-voltage and high-current MOSFET designed for use in a variety of applications. It is a member of the NTDV series of MOSFETs, which are built to handle large amounts of current, and provide high-speed switching and excellent thermal stability. The NTDV18N06LT4G is capable of handling a wide range of voltages, and its on-resistance values are also high. This makes it suitable for a variety of applications, including audio/video, automotive, and power-supply applications.
The NTDV18N06LT4G transistor is a metal–oxide–semiconductor field-effect transistor, or MOSFET. MOSFETs are built from three components: the gate, the source, and the drain. The gate is where a voltage is applied to create an electric field, and this field modulates the flow of current between the source and drain. When no voltage is applied to the gate, the current flow is off, and when a voltage is applied, the current flow can be modulated up or down. This makes MOSFETs great for high-speed switching applications, as well as for applications that require low power consumption.
To better understand how the NTDV18N06LT4G works, let’s take a closer look at its specifications. The NTD18N06LT4G has a peak inverse voltage of 20V and an on-resistance of 0.018 ohms. It also has a gate-to-drain capacitance of 75pF, and a gate-threshold voltage of 4V. This means that it can handle large amounts of power and current with minimal heat and energy losses. Additionally, its low gate-threshold voltage allows it to be used in high-speed switching applications, as it can quickly turn on, and off with minimal losses.
The NTDV18N06LT4G MOSFET is an excellent choice for high-power and high-current applications such as motor control and power-supply systems. Its low on-resistance and high peak inverse voltage make it suitable for high-voltage applications, such as audio/video and automotive applications. Additionally, its high gate-threshold voltage makes it suitable for high-speed switching applications. It is also capable of handling large amounts of current, making it ideal for power-supply systems and motor control applications. By combining all of these features, the NTDV18N06LT4G MOSFET is a great all-round transistor for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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