NTDV20N06T4G-VF01 Allicdata Electronics
Allicdata Part #:

NTDV20N06T4G-VF01-ND

Manufacturer Part#:

NTDV20N06T4G-VF01

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 20A DPAK
More Detail: N-Channel 60V 20A (Ta) 1.88W (Ta), 60W (Tj) Surfac...
DataSheet: NTDV20N06T4G-VF01 datasheetNTDV20N06T4G-VF01 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.88W (Ta), 60W (Tj)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1015pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 46 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The NTDV20N06T4G-VF01 is a field effect transistor (FET) with a single junction gate. It is a commonly used FET in many industrial and consumer applications such as motor control, power control and lighting. As a fast switching, low voltage, low on-resistance MOSFET, it makes it ideal for applications where space saving, high speed and low power consumption is a priority.

This FET has low gate-source capacitance and low gate charge, which makes it ideal for applications that require fast switching speeds such as motor and lighting control. The NTDV20N06T4G-VF01 also has a low on-state resistance, which makes it suitable for high current applications. This FET has an input voltage range of 2 Volts to 16 Volts, an on-state drain current of 20 Amps, an off-state drain-source voltage of 60 Volts and a total gate charge of 0.8nC.

The working principle of this FET is that it consists of three layers: a source, a drain and a gate. When a voltage is applied to the gate, the resistance between the source and drain changes or ‘switches’, thus allowing current to flow through the FET. Depending on the voltage level, the resistance of the FET can be altered, allowing the user to control the amount of current flowing through the FET.

The NTDV20N06T4G-VF01 FET is a commonly used component in power supplies, motor drivers, lighting controllers and other industrial and consumer applications. It is widely used due to its fast switching speed, low-on resistance, easy to use gate design and low gate charge.

This FET is used widely in lighting control applications where it is used to turn lights on and off quickly, while conserving energy. It is also used in motor control where it can be used to speed up or slow down a motor depending on the voltage applied to the gate. In industrial applications, this FET is used for high current applications such as in power supplies as it can handle large amounts of current without overheating.

In conclusion, the NTDV20N06T4G-VF01 is a fast switching, low voltage, low on-resistance MOSFET with a single junction gate. It is widely used in power, lighting and motor control applications, due to its fast switching speed and low gate charge. It is also capable of handling high levels of current, making it suitable for high current applications. With its easy to use gate design and low on-state resistance, this FET is ideal for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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