NTDV5805NT4G

Vgs(th) (Max) @ Id:	3.5V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK
Mounting Type:	Surface Mount
Operating Temperature:	--
Power Dissipation (Max):	--
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1725pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	80nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	9.5 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Current - Continuous Drain (Id) @ 25°C:	51A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The NTDV5805NT4G is a high performance enhancement mode power metal-oxide-semiconductor field-effect transistor (MOSFET) with excellent off-state characteristics. It is a single-channel, single-gate FET device, constructed on a planar technology and is available in both an active (SOIC-8 and DFN-8) and an exposed pad (QFN-8) package.The NTDV5805NT4G is suitable for applications where a smaller size, higher current capacity and higher frequencies are required. It provides an excellent balance between on-state characteristics and fast switching performance.The NTDV5805NT4G has an operating voltage rating of 10V and a maximum current rating of 8A. It has a total gate charge of 2.2nC (typical) and a toggling frequency of 2.4GHz (typical). It also features good temperature stability and distortion control.The NTDV5805NT4G has several applications and is commonly used in power converters, power switches, DC and AC motors, industrial automation, and test and measurement systems. Additionally, it can be used in various other commercial, industrial, and automotive applications.The NTDV5805NT4G works on the principle of an enhancement mode FET. This device has two distinct modes of operation: enhancement mode and depletion mode. In enhancement mode, the transistor is normally off and the gate-to-source voltage must be sufficiently high for conduction to occur. In depletion mode, the transistor is normally on and the gate-to-source voltage must be sufficiently low for conduction to stop.The NTDV5805NT4G is a single-channel MOSFET device. In the device, electrons from the source flow through the channel when the gate voltage is higher than the threshold voltage. The gate-drain capacitance and the drain-source capacitance form a capacitive network with parasitic elements. This capacitive network has an affect on the current and frequency of the MOSFET.The NTDV5805NT4G offers excellent performance, making it an ideal choice for applications where small size, higher current capacity, and high switching frequencies are required. Its on-state characteristics, temperature stability, and distortion control offer considerable advantages over those of similar devices. With its low total gate charge and toggling frequency, the NTDV5805NT4G is a great choice for power converters, power switches, DC and AC motors, industrial automation, and test and measurement systems.

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