NTDV2955-1G

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NTDV2955-1G, also called P-channel enhancement mode MOSFETs, is an NTDV series field-effect transistor (FET) device based on advanced CMOS, polysilicon and Zener structure technologies. It is essentially a metal oxide semiconductor, employs a systemic and complementary MOSFET architecture with an extended temperature range of -40°C to +125°C, and provides an excellent ESD performance.

A metal oxide semiconductor (MOS) device consists of an oxide insulating region (gate oxide) and a laterally diffused p-type semiconductor region. The gate oxide is typically made of silicon dioxide (SiO2), and this structure is connected to the source and drain contacts, which are connected to metal contacts and the gate contact, respectively. When a positive voltage is applied to the gate contact, electrons are repelled away from this region, creating a depletion region. This, in turn, modifies the existing electric field to create a conductor path between the source and drain contacts.

When compared to conventional FETs, NTDV2955-1G gives much better ESD and latch-up immunity, which makes it capable of sustaining severe power conditions. Additionally, due to its polysilicon structure, it also carries a much better temperature stability than standard FET components. As the gate and source-drain junctions of NTDV2955-1G are formed with polysilicon, this type of MOSFET is also capable of sustaining higher power density than comparable FET components.

Coming to the application fields of NTDV2955-1G, it is widely used for designing power switches in variable power supplies, converters, industrial applications, peripheral devices, and so on. As the device structure is designed to consume very low gate charge, NTDV2955-1G can be used in the switching and control circuits of DC/DC power supplies.

Compact packages like MSOP, SOIC, and TSSOP are used for NTDV2955-1G devices, and it is designed to operate at voltage ratings of 3V, 5V, and 12V. The device’s excellent ESD protection allows it to withstand up to 2000V without showing any degradation. The gate-source threshold voltage of NTDV2955-1G is -2V, and its maximum drain-source breakdown voltage can go up to 30V.

To sum up, NTDV2955-1G is a high performance p-channel MOSFET that offers a wide range of advantages including excellent ESD protection, high temperature stability, low gate charge, and a wide applied voltage range. It is widely used in various industrial applications, DC/DC power supplies, and other peripheral devices.

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