
NTNS3164NZT5G Discrete Semiconductor Products |
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Allicdata Part #: | NTNS3164NZT5GOSTR-ND |
Manufacturer Part#: |
NTNS3164NZT5G |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 20V 0.361A SOT883 |
More Detail: | N-Channel 20V 361mA (Ta) 155mW (Ta) Surface Mount ... |
DataSheet: | ![]() |
Quantity: | 16000 |
8000 +: | $ 0.06738 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | SC-101, SOT-883 |
Supplier Device Package: | SOT-883 (XDFN3) (1x0.6) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 155mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 24pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 0.8nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 700 mOhm @ 200mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 361mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NTNS3164NZT-5G is a high speed low-voltage logic N-channel enhancement mode MOSFET, which is designed for applications in high-speed switching. It has excellent performances, such as a low resistance drain-source on-state resistance, an ultra-low gate charge, and a high-speed switching speed. The device has been designed to minimize power loss, minimize noise, and improve system reliability. It is also suitable to use in various circuits, such as DC-DC converters, AC-DC rectifiers, and RF switches.
The main features of the NTNS3164NZT-5G MOSFET include:
- Low output capacitance. It has low a capacitance between the drain and gate, which is beneficial for high-frequency operations.
- High-speed switching speeds. It has a fast switching speed, which reduces the switching time and improves efficiency.
- Low gate charge. It has a low gate charge, which reduces the power loss and noise.
- Low on-state resistance. Its low on-state resistance helps reduce power loss and improve efficiency.
The NTNS3164NZT-5G MOSFET is mainly used in the following applications:
- DC-DC converters. It is used in DC-DC converters because of its ability to process high-energy pulses in a very short time.
- AC-DC rectifiers. It is also used in AC-DC rectifiers because of its low gate charge and excellent on-state resistance.
- RF switches. It is also used in RF switches because of its fast switching speed and low on-state resistance.
The working principle of the NTNS3164NZT-5G MOSFET is simple. When a voltage is applied to the gate of the MOSFET, it creates an electric field in the channel, which is between the source and the drain. This electric field causes electrons to be repelled from the source and attracted to the drain, resulting in a current path between the source and the drain. The gate voltage is used to control the resistance of the channel and therefore the current flow. The higher the gate voltage, the more current that can flow through the channel and the lower the gate voltage, the less current that can flow through the channel.
The NTNS3164NZT-5G is an excellent choice for high-speed switching in a variety of applications such as DC-DC converters, AC-DC rectifiers, and RF switches. It has excellent performance, such as a low resistance drain-source on-state resistance, an ultra-low gate charge, and a high-speed switching speed. It also has the ability to process high-energy pulses in a very short time, which makes it an ideal choice for high-speed switching applications.
The specific data is subject to PDF, and the above content is for reference
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