NTNS3193NZT5G Discrete Semiconductor Products

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The NTNS3193NZT5G is a single-pole single-throw (SPST) N-Channel MOSFET with a drain-source voltage of 30V and a gate-source voltage of ±12V. It is a very reliable, high-speed power MOSFET with a maximum drain current of 4A and a maximum drain-source resistance of 0.008Ω. This transistor is typically used in smart switches, DC motor controls, and power supplies.

MOSFET stands for “ Metal Oxide Semiconductor Field Effect Transistor” and is a type of transistor which is designed to switch or amplify electrical signals. MOSFETs are able to switch on and off at high frequencies because they have very low on-resistance when they are turned on. They are used in various applications due to their high power handling capabilities, low noise, and low on-resistance.

The NTNS3193NZT5G is an example of an N-Channel enhancement mode enhancement mode MOSFET. These devices work by turning on the drain current when a positive voltage is applied to the gate terminal. The amount of current flowing between the drain and the source terminals can be controlled by adjusting the level of the gate voltage. The MOSFET will stay off until the gate voltage reaches the threshold voltage, which is typically 6V.

The drain-source voltage of the NTNS3193NZT5G is 30V and the maximum drain current is 4A. This makes the device suitable for use in applications that require high power handling capabilities, such as switch-mode power supplies, lighting, and automotive applications. The MOSFET can handle high power levels with minimal power losses, making it a reliable choice for these demanding applications.

The NTNS3193NZT5G is a reliable and efficient MOSFET for applications with high power needs. With a threshold voltage of 6V, a drain-source voltage of 30V and a maximum drain current of 4A, the device can handle high power levels with minimal power losses. This makes it suitable for applications such as switch-mode power supplies, lighting, and automotive applications.

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