NTNS3190NZT5G Discrete Semiconductor Products

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NTNS3190NZT5G is a commonly used metal-oxide-semiconductor field-effect transistor (MOSFET), developed and manufactured by ON Semiconductor. It belongs to the single type family, better known as a “single FET”. This MOSFET is designed to operate as a low-voltage switching device, with a breakdown voltage of 30 Volts and a maximum drain-to-source voltage of 15 Volts.

The NTNS3190NZT5G consists of a source, gate and drain terminal, which are the principal element controlling the switching operation between the drain and source terminals. The source terminal is the control terminal of the device and the gate terminal provides the electrostatic potential that applies a field electric field to the channel between the source and drain terminal. When a positive electric field is applied across the channel, the device turns “ON” and current can flow freely between the drain and source terminals. When the electric field is reversed, the device turns “OFF” and current cannot flow between these terminals.

The NTNS3190NZT5G utilizes depletion mode operation, meaning that current can flow between the drain and source terminals with no gate voltage applied. The device can be effectively used in digital logic applications, as a low-voltage switch. This MOSFET can also be used to control the current in analog circuit design, where it is common to see a variety of bias and protection circuits utilizing this type of device. The functionality as a low-voltage switch also makes the NTNS3190NZT5G an ideal component for switching small amounts of low voltage signals.

The NTNS3190NZT5G also has other impressive characteristics, such as a low on-resistance of only 2.5 Ohms, with a max drain-to-source current of 2A and a max power dissipation of 150mW. This MOSFET has a maximum junction temperature of 150°C, making it suitable for operation in a wide variety of high-power applications.

In summary, the NTNS3190NZT5G is a typically used MOSFET device, operating as a low-voltage switch. It is often used in digital logic, analog circuit design and low-voltage applications, and is known for its low on-resistance, allowing a maximum drain-to-source current of 2A and a maximum power dissipation of 150mW. Moreover, its maximum junction temperature of 150°C make it suitable for operation in a wide range of applications.

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