NTNS3A65PZT5G Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	1V @ 250µA
Package / Case:	SC-101, SOT-883
Supplier Device Package:	SOT-883 (XDFN3) (1x0.6)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	155mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	44pF @ 10V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	1.1nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	1.3 Ohm @ 200mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	281mA (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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NTNS3A65PZT5G Application Field and Working Principle

N-Channel MOSFETs (NMOS) are commonly used as switches and amplifiers in electronic components. The NTNS3A65PZT5G is an N-channel enhancement-mode MOSFET designed for use in low-frequency switching and low-power load switching applications. It is an insulating-gate transistor with an output of 65 volts and a maximum drain current rating of 5 amperes.When used as a switch, the NTNS3A65PZT5G provides voltage regulation and current limiting to protect other components from overload. When used as an amplifier, it allows control of either positive or negative signals over a wide amplifier range. Additionally, the NTNS3A65PZT5G can be used as a voltage follower, providing buffered drive and current limiting.The total gate capacitance of the NTNS3A65PZT5G is 1.1 nF at 1 GHz, and its maximum voltage rating is 30 volts. The maximum current rating of the device is 4 amperes. The maximum power dissipation of the transistor is 1.5 W and the available single-channel power handling capacity is 27 W. The maximum junction temperature rating is 175°C.The device is manufactured in a TO-220FAB package, and is easily assembled and mounted on a circuit board. It is well suited for low-frequency, low-power applications and requires minimal external components.The NTNS3A65PZT5G is an enhancement-mode MOSFET. This means that there is no external bias necessary. The device turns on when a voltage is applied across its gate and drain electrodes, and off when the voltage is removed. The device draws very little power when idle, making it highly efficient in low-power applications.The working of the device is based on an electrostatic mechanism. When a voltage is applied to the gate, it creates an electrostatic field that attracts electrons from the channel between the source and the drain. This creates an inversion layer of electrons, which allows a current to flow between the source and the drain.The NTNS3A65PZT5G can be used in various applications including switching, signal level shifting, current amplification, frequency control and voltage stabilizing. It can also be used as a switch to control the flow of power in low-power applications such as motor control circuits and lighting circuits.In summary, the NTNS3A65PZT5G is an N-channel enhancement-mode MOSFET designed for use in low-frequency switching and low-power load switching applications. It provides voltage regulation and current limiting to protect other components. The device can be used in various applications including switching, signal level shifting, current amplification, frequency control and voltage stabilizing. The device is highly efficient in low-power applications since it draws very little power when idle.

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