Allicdata Part #: | NTP30N06OS-ND |
Manufacturer Part#: |
NTP30N06 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 27A TO220AB |
More Detail: | N-Channel 60V 27A (Ta) 88.2W (Tc) Through Hole TO-... |
DataSheet: | NTP30N06 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 88.2W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 42 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 27A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The NTP30N06 is a MOSFET transistor that belongs to the single FET (Field Effect Transistor) family. It is an n-channel enhancement mode device that operates by using an insulated gate to control the flow of electrons between the source and drain terminals. This MOSFET transistor is able to handle high voltages and high currents with low gate control power.
The NTP30N06 has a package that is designed to be small and cost-effective and yet provides maximum power and performance. Its source-drain diode can withstand peak voltages of up to 30 volts and is able to switch at speeds of up to 4.5 MHz. It also features a low on-resistance of 0.05 Ω and a thermal resistance of 7.5 K/W, allowing it to operate efficiently in high power applications.
The NTP30N06 is a versatile MOSFET transistor that can be used in a wide range of applications, including power switches, motor control, and lighting applications. It is especially suited for high frequency applications, such as switched-mode power supplies, or for switching applications that require low power dissipation.
The NTP30N06 is designed to operate under both proportional mode and smart-mode operation. In proportional mode, the transistor is enabled when the logic input exceeds a certain level, and it is disabled when the logic input falls below a certain level. Smart-mode operation, on the other hand, requires a voltage greater than the enable voltage to turn on the transistor and then a lower voltage to keep it turned on.
The NTP30N06 also includes an integrated body diode to protect it from reverse voltage spikes and other transient voltage disturbances. It also has a built-in ESD protection diode to protect the transistor from electrostatic discharge. The gate-to-source protection diode further reduces the risk of ESD damage to the channel of the transistor.
The NTP30N06 is an ideal choice for many applications due to its low power consumption, high speed, and low on-resistance. Its low on-resistance allows for efficient energy consumption while its high-speed switching capability makes it suitable for many high-frequency applications. Its low cost and small size makes it a desirable choice for high power applications.
In addition to its versatile and wide range of applications, the NTP30N06 is also a reliable and cost-effective device. Its low cost and compact size make it an attractive choice for use in many high power applications. Its reliability ensures that it can be used in many demanding applications with confidence.
The specific data is subject to PDF, and the above content is for reference
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