| Allicdata Part #: | NTP30N20GOS-ND |
| Manufacturer Part#: |
NTP30N20G |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 200V 30A TO220AB |
| More Detail: | N-Channel 200V 30A (Ta) 214W (Tc) Through Hole TO-... |
| DataSheet: |  NTP30N20G Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 214W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2335pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 81 mOhm @ 15A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 30A (Ta) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The NTP30N20G is a power MOSFET that belongs to the super junction MOSFET (SJ-MOSFET) family of products from ON Semiconductor. It is designed to provide an optimized and cost-effective solution for a wide range of power conversion and power management applications.
The NTP30N20G utilizes the latest advancements in high voltage super junction MOSFET technology. It is a single N-channel MOSFET with a drain-source breakdown voltage (BVdss) of 200V and a maximum drain-source voltage (VDS) of 30V. It has an on-state resistance RDS(ON) of 30mΩ and a maximum drain current of 20A.
The NTP30N20G is well-suited for a wide range of high voltage power conversion and power management applications. It can be used in power converters such as DC-DC or AC-DC converters, motor inverters, class D amplifiers, and automotive applications as a power switch or for motor control. It can also be used for a range of other applications, such as power management in consumer electronics and industrial equipment.
The working principle of the NTP30N20G is based on the MOSFET transistor. A MOSFET is a transistor used for making a low-resistance connection between the source and drain terminals of a device. The NTP30N20G is an N-channel MOSFET, so the drain-source connection is made when a small voltage is applied to the gate. The current flow through the device depends on the amount of voltage applied to the gate and can be used to regulate the amount of power supplied to a load.
When the gate voltage is increased, the resistance of the device decreases. This in turn increases the amount of current that is allowed to flow through the device. On the other hand, when the gate voltage is decreased, the resistance of the device increases and the amount of current that is allowed to flow through the device is decreased.
The NTP30N20G is rated for a maximum gate-source voltage of 20V, which means that the gate voltage must not exceed this limit. Additionally, the NTP30N20G has a maximum continuous drain current of 20A and not exceeding this limit is important for ensuring the safe operation of the device.
In summary, the NTP30N20G is a single N-channel MOSFET with a drain-source breakdown voltage of 200V, a maximum drain-source voltage of 30V, an on-state resistance of 30mΩ, and a maximum drain current of 20A. It is well-suited for use in a variety of high voltage power conversion and power management applications and operates based on the principle of a MOSFET transistor.
The specific data is subject to PDF, and the above content is for reference
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