![NTP30N06LG Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | NTP30N06LGOS-ND |
Manufacturer Part#: |
NTP30N06LG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 30A TO220AB |
More Detail: | N-Channel 60V 30A (Ta) 88.2W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 88.2W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1150pF @ 25V |
Vgs (Max): | ±15V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 46 mOhm @ 15A, 5V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The NTP30N06LG is a power MOSFET suitable for heavy-duty switching and amplifier applications. The device is a 30V, 60A single N-channel enhancement-mode power MOSFET (E-MOSFET) produced using specialized trench process technology. It is designed to minimize the on-resistance of the device and provide a rugged, reliable power MOSFET suitable for automotive, medical, industrial, and other high power applications.
Typical applications of the NTP30N06LG include DC-DC converters, amplifier circuits, switch-mode power supply circuits, lighting circuits, and motor control applications. In general, power MOSFETs can be used in high-power switching applications, such as motor control and lighting, and in switching applications similar to those for power BJTs.
The NTP30N06LG is a N-channel, enhancement-mode MOSFET, which means that it is based on a four layer PNPN device structure. Within this device, the source and drain regions are formed by highly-doped regions of N-type semiconductor material, and the gate and source regions are separated by a thin oxide layer. When a voltage is applied to the gate, the oxide layer becomes conductive, allowing electrons to flow from the source to the drain. This is known as the \'enhancement\' mode of operation, as the conducting channel is \'enhanced\' by the applied gate voltage. When the gate voltage is removed, the channel between source and drain regions is no longer conductive and the device is \'off\' (no current flows). This makes the device suitable for applications such as traction control, as well as power switching applications, such as motor control orlighting.
TheNTP30N06LG is a robust and efficient power MOSFET, designed to provide reliable performance in high power switching applications. The device has a low on-resistance (Rds(on)) which enables it to fully turn on with relatively low gate voltages, and its low leakage current ensures the device’s efficient operation. Furthermore, the device is designed for high-temperature environments and can be used in high-voltage applications with good protection against reverse bias breakdown.
The NTP30N06LG is a high-performance MOSFET suitable for use in a wide range of applications including power supplies, motors, amplifiers and lighting circuits. The device features low on-resistance and low leakage current, allowing for efficient operation in high power applications. The device is rugged and reliable, featuring reverse bias protection, and is designed to operate reliably even in high-temperature environments.
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