NTP30N06LG Allicdata Electronics
Allicdata Part #:

NTP30N06LGOS-ND

Manufacturer Part#:

NTP30N06LG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 30A TO220AB
More Detail: N-Channel 60V 30A (Ta) 88.2W (Tc) Through Hole TO-...
DataSheet: NTP30N06LG datasheetNTP30N06LG Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 88.2W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 46 mOhm @ 15A, 5V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The NTP30N06LG is a power MOSFET suitable for heavy-duty switching and amplifier applications. The device is a 30V, 60A single N-channel enhancement-mode power MOSFET (E-MOSFET) produced using specialized trench process technology. It is designed to minimize the on-resistance of the device and provide a rugged, reliable power MOSFET suitable for automotive, medical, industrial, and other high power applications.

Typical applications of the NTP30N06LG include DC-DC converters, amplifier circuits, switch-mode power supply circuits, lighting circuits, and motor control applications. In general, power MOSFETs can be used in high-power switching applications, such as motor control and lighting, and in switching applications similar to those for power BJTs.

The NTP30N06LG is a N-channel, enhancement-mode MOSFET, which means that it is based on a four layer PNPN device structure. Within this device, the source and drain regions are formed by highly-doped regions of N-type semiconductor material, and the gate and source regions are separated by a thin oxide layer. When a voltage is applied to the gate, the oxide layer becomes conductive, allowing electrons to flow from the source to the drain. This is known as the \'enhancement\' mode of operation, as the conducting channel is \'enhanced\' by the applied gate voltage. When the gate voltage is removed, the channel between source and drain regions is no longer conductive and the device is \'off\' (no current flows). This makes the device suitable for applications such as traction control, as well as power switching applications, such as motor control orlighting.

TheNTP30N06LG is a robust and efficient power MOSFET, designed to provide reliable performance in high power switching applications. The device has a low on-resistance (Rds(on)) which enables it to fully turn on with relatively low gate voltages, and its low leakage current ensures the device’s efficient operation. Furthermore, the device is designed for high-temperature environments and can be used in high-voltage applications with good protection against reverse bias breakdown.

The NTP30N06LG is a high-performance MOSFET suitable for use in a wide range of applications including power supplies, motors, amplifiers and lighting circuits. The device features low on-resistance and low leakage current, allowing for efficient operation in high power applications. The device is rugged and reliable, featuring reverse bias protection, and is designed to operate reliably even in high-temperature environments.

The specific data is subject to PDF, and the above content is for reference

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